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Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

A semiconductor and silicon carbide technology, which is applied in the field of manufacturing silicon carbide semiconductor devices, can solve problems such as the charge compensation structure of silicon carbide semiconductor devices that are not mentioned

Inactive Publication Date: 2013-08-21
SUMITOMO ELECTRIC IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The above publications do not mention charge compensation structures suitable for silicon carbide semiconductor devices with gate trenches

Method used

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  • Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
  • Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
  • Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

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Embodiment Construction

[0034] Hereinafter, an embodiment of the present invention will be described based on the drawings. In the drawings explained below, the same reference numerals are assigned to the same or corresponding elements, and the description thereof will not be repeated. As for the crystallographic representation in this specification, the specific face is represented by (), and the set of the same face is represented by {}. For negative indices, in crystallography, a bar (-) is usually assigned above the value. However, in this manual, a minus sign will be appended before the value.

[0035] First, refer to Figure 1 to Figure 5 The structure of the MOSFET 100 (silicon carbide semiconductor device) according to the present embodiment is described.

[0036] Such as figure 1 As shown in, MOSFET 100 includes single crystal substrate 1, SiC layer 10 (silicon carbide layer), drain electrode 31 (first electrode), source electrode 32 (second electrode), gate oxide film 21 (gate insulating film)...

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Abstract

A silicon carbide layer having a first surface and a second surface includes a first region constituting the first surface and of a first conductivity type, a second region provided on the first region and of said second conductivity type, and a third region provided on the second region and of the first conductivity type. At the second surface is formed a gate electrode having a bottom and sidewall, passing through the third region and the second region up to the first region. An additional trench is formed, extending from the bottom of the gate trench in the thickness direction. A fourth region of the second conductivity type is formed to fill the additional trench.

Description

Technical field [0001] The present invention relates to a method of manufacturing a silicon carbide semiconductor device and a silicon carbide semiconductor device, and more specifically, to a method of manufacturing a silicon carbide semiconductor device having a gate trench and a silicon carbide semiconductor device. Background technique [0002] It is known that it is generally necessary to balance the on-resistance and breakdown voltage in semiconductor devices used for electric power. In recent years, for the purpose of increasing the breakdown voltage while suppressing on-resistance, a semiconductor device having a charge compensation structure such as a super junction structure has been proposed. For example, Japanese Patent Laid-Open No. 2004-342660 discloses a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) having a charge compensation structure. [0003] The above publication does not mention a charge compensation structure suitable for silicon carbide s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/04H01L29/78H01L29/06
CPCH01L29/0634H01L29/0696H01L29/1608H01L29/4236H01L29/66068H01L29/7813H01L29/66666H01L29/7827
Inventor 林秀树增田健良
Owner SUMITOMO ELECTRIC IND LTD
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