Transistors with isolation regions

Abstract

Provide a transistor device, including: source, gate, drain; semiconductor material including the gate area between the source and the drain; multiple channels in the semiconductor material on any side of the gate of the gateAccess area; channels in the gate area and channel access area in semiconductor materials; and isolation areas in the gate area.The isolation area is used to reduce the effective width of the channel in the gate area without lowering the effective width of the channel in the access area.As a replacement, the isolation area can be constructed to collect the cavity generated in the transistor device.The isolation area can achieve the above two functions at the same time.

Description

technical field [0001] Semiconductor electronic devices and assemblies are provided, as well as various circuit applications employing the semiconductor electronic devices and assemblies. Background technique [0002] To date, most transistors used in power electronics applications are typically fabricated from silicon (Si) semiconductor material. Common transistor devices for power applications include SiCoolMOS, SiPowerMOSFET, and Si Insulated Gate Bipolar Transistors (IGBTs). Although Si power devices are relatively inexpensive, they suffer from a number of disadvantages, including relatively slow switching speeds and high electrical noise. Recently, silicon carbide (SiC) power devices have been considered due to their superior properties. Emerging III-N semiconductor devices such as gallium nitride (GaN) devices are now attractive candidates, capable of carrying large currents, withstanding high voltages and offering very low on-resistance and Fast switching times. A...

AI Technical Summary

Problems solved by technology

A high voltage device capable of blocking at least a voltage equal to the maximum voltage of the high voltage supply or the circuit using it

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