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Manufacturing method of low emissivity (Low-e) glass

A technology of glass manufacturing and manufacturing method, which is applied in the field of low-emission Low-E glass manufacturing, which can solve the problems of reducing the square resistance and emissivity of the infrared reflective layer, so as to improve acid and alkali corrosion resistance, improve infrared reflection characteristics, and block The effect of resistance drop

Inactive Publication Date: 2013-08-28
林嘉佑
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  • Application Information

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Problems solved by technology

[0009] The present invention aims at providing a Low- E glass manufacturing method

Method used

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  • Manufacturing method of low emissivity (Low-e) glass
  • Manufacturing method of low emissivity (Low-e) glass
  • Manufacturing method of low emissivity (Low-e) glass

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Embodiment Construction

[0028] In order to illustrate the technical content, structural features, achieved goals and effects of the present invention in detail, the following will be described in detail in conjunction with the embodiments and accompanying drawings.

[0029] The Low-E glass obtained by the manufacturing method of the Low-E glass of the present invention can be applied to fields such as automobile glass and insulating glass. For example, in the field of automotive glass, the Low-E glass can be laminated with another glass through PVB interlayer, and the solar control film of the Low-E glass is interposed between the PVB interlayer and the glass substrate. As a non-limiting example, the low-E glass solar control film system includes but not limited to single silver Low-E film, double silver Low-E film, and triple silver Low-E film.

[0030] As a specific embodiment of the present invention, the infrared reflective seed layer of the infrared reflective layer is prepared by a magnetron sp...

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Abstract

The invention provides a manufacturing method of low emissivity (Low-E) glass. The method comprises the following steps of: providing a glass substrate; forming at least a first dielectric layer on the glass substrate; depositing an infrared reflection seed layer on the first dielectric layer through magnetron sputtering; depositing an infrared reflection additional layer on the infrared reflection seed layer through ion beam assisted deposition; and depositing a second dielectric layer on an infrared reflection layer of the glass substrate. The Low-E glass obtained by the manufacturing method provided by the invention has the following characteristics: a, the square resistance is reduced and the infrared reflection characteristics are improved; b, the emissivity decreases; and c, the processing resistance of a sunlight control membrane system is enhanced. Meanwhile, according to the infrared reflection layer of the Low-E glass obtained by the manufacturing method, the original outward stress is converted into inward stress, so that the acid and alkali corrosion resistance, inoxidizability, humidity resistance, high temperature resistance and the like of the sunlight control membrane system are extremely improved.

Description

technical field [0001] The invention relates to the technical field of thin film deposition, in particular to a method for manufacturing low-radiation Low-E glass. Background technique [0002] At present, low-e Low-E glass, as an energy-saving and environmentally friendly product, has been widely used in technical fields such as glass curtain walls and automotive glass. The manufacturing equipment and production process of the Low-E glass have been described in detail in US Pat. [0003] Generally, the design direction of the Low-E glass is: high visible light transmittance, neutral color, low emissivity, low sheet resistance, and good processing resistance. The high visible light transmittance makes the Low-E glass more applicable in application fields such as automobile glass and glass curtain wall. The characteristics of low emissivity and low sheet resistance enable the Low-E glass to effectively block unwanted infrared heat from entering the room. [0004] However, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34
Inventor 林嘉佑
Owner 林嘉佑
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