High temperature oxidation equipment

Abstract

The invention relates to the field of micro-electronics manufacturing, in particular to high-temperature oxidization equipment. The high-temperature oxidization equipment comprises a vertical barrel-shaped wafer boat, wherein a plurality of frustum-shaped supporting rings for placing wafers are arranged in the wafer boat, and the radiuses of the frustum-shaped supporting rings are gradually increased from top to bottom; and the slope of each supporting ring and the inner wall of the wafer boat form an inclination angle alpha. When a high-temperature oxidization technology is performed, reaction gas is fed into the wafer boat; the supporting rings are provided with the slopes, so that the reaction gas can be more easily fed into the center positions of the wafer surfaces, and the gas reaction concentration difference between the edge position and the center position on the upper surface of each wafer is reduced; and therefore, a layer of oxidized film with more uniform thickness grows on the surface of each wafer, and the performance of a device and the production technology are improved simultaneously.

Description

technical field [0001] The invention relates to the field of microelectronics manufacturing, to be precise, the invention specifically relates to a high-temperature oxidation device. Background technique [0002] With the continuous advancement of technology in the field of microelectronics, the requirements for the process level of wafers are also getting higher and higher. In some production processes, an HTO (High Temp Oxidation, high temperature oxidation) process is required to grow an oxide film on the surface of the wafer and perform subsequent processes. Due to its fast oxidation speed and simple process, the high temperature oxidation process is widely used in production technologies such as thin film interlayer dielectric, spacer between gate transistors, and surrounding poly-si interconnect line. In the traditional technology, the method of forming an oxide film on the surface of the wafer is generally to place the wafer on the support frame in the wafer boat, an...

AI Technical Summary

Problems solved by technology

[0008] However, the manufacturing cost of the reaction chamber provided by this invention is relatively high, and the production process is relatively cumbersome. At the same time, when the invention is performing a high-temperature oxidation process, it is difficult to ensure that the reaction gas enters the center of the wafer better, resulting in The difference in the thickness of the oxide film grown at the position and the edge position is large, which affects the yield of the product

Images