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Liquid phase epitaxy device for preparing InAsSb films and method

A technology of liquid phase epitaxy and thin film, which is applied in the direction of liquid phase epitaxy layer growth, chemical instruments and methods, and single crystal growth. It can solve the problems of residual mother liquor, high equipment cost, and sample scrapping, so as to improve the yield and eliminate mother liquor. The effect of residue and simple process

Inactive Publication Date: 2013-09-11
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

The rotary immersion method uses gravity to separate the mother liquid from the surface of the substrate. The advantage is that the method is simple, but the disadvantage is that the mother liquid is not clean, and the mother liquid often remains, which makes the sample scrapped.
The vertical centrifugation method is to rotate the substrate at a high speed, and get rid of the mother liquor through the action of centrifugal force. Its advantage is that it can basically eliminate the mother liquor residue, and the yield of the sample is high. The disadvantage is that the equipment cost is high.
The horizontal sliding push boat method is a method in which the mother liquor is scraped off the surface of the substrate by using the mother liquor tank. The mother liquor is required to have a certain viscosity. The advantage is that the method is simple and it is easy to prepare multi-layer films. high

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  • Liquid phase epitaxy device for preparing InAsSb films and method

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Embodiment Construction

[0017] The preparation of InAs by using a liquid phase epitaxy device and method for preparing InAsSb thin films of the present invention will be described in detail below in conjunction with the accompanying drawings and specific examples 0.9 Sb 0.1 film process.

[0018] figure 1 It is a structural schematic diagram of the device of the present invention. As can be seen from the figure, a liquid phase epitaxy device for preparing InAsSb thin films of the present invention includes a mother liquid boat 1, a substrate boat 5 and a high-pressure air gun 7: the middle of the mother liquid boat 1 has a baffle valve 2, and the outlet 12 is narrow , the mother liquor boat 1 is supported by a quartz rod 3 with a ring, and the baffle valve 2 is opened by a quartz rod 4 with a hook; the substrate boat 5 has a substrate tank 53, a waste mother liquor collection tank 52 and a fixed baffle 51, and the substrate 6 is tightly inserted into the substrate groove 53; the high-pressure air ...

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Abstract

The invention discloses a liquid phase epitaxy device and method for preparing InAsSb films. The device comprises three parts consisting of a mother liquor boat, a substrate boat and a high pressure air gun. The preparation method comprises three steps comprising: first, putting raw materials into the mother liquor boat, and elevating temperature of the system to homogenize the raw materials; then transferring a saturated mother liquor to the substrate surface of the substrate boat to grow the films, and blowing the mother liquor away from the substrate surface by use of the high pressure air gun after the growth of the films is completed; decreasing the system temperature to room temperature and taking the samples out. The advantages of the liquid phase epitaxy device and method for preparing InAsSb films are that: residue of the mother liquor can be effectively eliminated by high pressure air flows sprayed by the high pressure air pressure gun, the rate of finished products of the samples is increased, and processes are simple.

Description

technical field [0001] The invention relates to a liquid phase epitaxy device and method for preparing crystal thin films, which are especially suitable for preparing compound semiconductor thin films, such as InAsSb, GaAs, HgCdTe, etc., and have wide application in the fields of photoelectric devices and the like. Background technique [0002] Liquid phase epitaxy is a method of depositing crystal thin films on the surface of single crystal substrates using saturated mother liquor. It has the advantages of low cost, easy maintenance, and good film quality. It is widely used in the preparation of optoelectronic devices such as InAsSb, GaAs, and HgCdTe. According to the way the mother liquor is separated from the surface of the film, liquid phase epitaxy is divided into rotary immersion method, vertical centrifugation method and horizontal sliding method. The spin immersion method uses gravity to separate the mother liquid from the surface of the substrate. The advantage is t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B19/00
Inventor 邓惠勇郭建华张云胡古今俞国林戴宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI