Liquid phase epitaxy device for preparing InAsSb films and method
A technology of liquid phase epitaxy and thin film, which is applied in the direction of liquid phase epitaxy layer growth, chemical instruments and methods, and single crystal growth. It can solve the problems of residual mother liquor, high equipment cost, and sample scrapping, so as to improve the yield and eliminate mother liquor. The effect of residue and simple process
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[0017] The preparation of InAs by using a liquid phase epitaxy device and method for preparing InAsSb thin films of the present invention will be described in detail below in conjunction with the accompanying drawings and specific examples 0.9 Sb 0.1 film process.
[0018] figure 1 It is a structural schematic diagram of the device of the present invention. As can be seen from the figure, a liquid phase epitaxy device for preparing InAsSb thin films of the present invention includes a mother liquid boat 1, a substrate boat 5 and a high-pressure air gun 7: the middle of the mother liquid boat 1 has a baffle valve 2, and the outlet 12 is narrow , the mother liquor boat 1 is supported by a quartz rod 3 with a ring, and the baffle valve 2 is opened by a quartz rod 4 with a hook; the substrate boat 5 has a substrate tank 53, a waste mother liquor collection tank 52 and a fixed baffle 51, and the substrate 6 is tightly inserted into the substrate groove 53; the high-pressure air ...
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