Photoresist treatment method and preparation method of semiconductor device

Abstract

The invention discloses a photoresist treatment method which comprises the following steps of: providing a base on which a graphic photoresist is arranged; carrying out spin coating on a micro auxiliary film on the photoresist to form a protection film on the surface of the photoresist; treating the protection film by adopting an ultraviolet curing process. According to the photoresist treatment method, the surface density of the photoresist can be effectively increased and the defect can be avoided or reduced on the premise that the line width is guaranteed.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a photoresist processing method and a semiconductor device preparation method. Background technique [0002] Advanced integrated circuit chips usually integrate multiple functional devices. However, multiple functional devices generally need to correspond to different field effect transistors (FETs). For example, a multiple gate oxide process is a common method for fabricating different field effect transistors in the same chip. [0003] In the prior art, the multi-gate oxide structure is generally prepared by the following methods: [0004] Firstly, a substrate 100 is provided. The substrate 100 has a first region 010 and a second region 020. Generally, the substrate 100 also includes an isolation structure 101, such as Figure 1a shown; [0005] Then, prepare a silicon oxide film 110 on the substrate 100, such as Figure 1b shown; [0006] Next, prepare ...

AI Technical Summary

Problems solved by technology

[0011] However, there are still some problems that need to be solved in the existing method for preventing photoresist defects from being produced in the wet etching process: in method 1), the baking temper

Images