Parallel laser direct writing system and photoetching method

Abstract

The invention discloses a parallel laser direct writing system and a photoetching method. Two or more graphic generators are provided, and different graphic generators are placed according to different angles so that the diagonal of each angle can be displayed through the horizontal or vertical straight line pixel in corresponding graphic generator, the sawtooth phenomenon on the original diagonal is eliminated, equal line width between the straight line and the diagonal is guaranteed, the line width uniformity of the graphic is improved, and the precision and quality of the photoetching process are improved.

Description

technical field [0001] The invention relates to the technical fields of mask plate preparation, maskless photolithography and laser direct writing, in particular to a parallel laser direct writing system and a photolithography method. Background technique [0002] In industries such as semiconductors, flat panel displays, and high-density printed circuits, high-precision micro-nano pattern writing is one of the key core processes. It is used for pattern writing such as mask plate preparation, which is called patterning. In the semiconductor industry, the line width requirement is at the sub-micron to nanometer level, mainly using electron beam lithography technology, while in the flat panel display and high-density printed circuit industries, the line width requirement is basically above 1 μm, and laser patterning lithography technology is widely used . [0003] Laser patterning lithography is also known as maskless lithography. [0004] In the field of laser patterning li...

AI Technical Summary

Problems solved by technology

[0010] However, the current spatial light modulator parallel lithography technology faces the following problems: first, when there are slanted lines in the exposed pattern, the pattern aliasing problem inevitably occurs; second, there is a gap between the slanted line and the straight line in the exposed pattern The problem of uneven line width

[0018] 1. After using high-power miniaturization, the data resolution will be finer, resulting in a double increase in the amount of graphic data

[0019] 2. Due to the characteristics of the miniaturization optical system, the high-magnification miniaturization design technology is more difficult, and the exposure field of view of the high-magnification miniaturization system is small, so the writing efficiency is low

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