Parallel laser direct writing system and photoetching method

A laser direct writing and optical system technology, applied in the fields of mask preparation, maskless lithography, and laser direct writing, can solve the problems of high-magnification miniaturization technology difficulty, low writing efficiency, uneven line width, etc., and achieve anti-aliasing. phenomenon, improved line width uniformity, accuracy and quality improvement

Inactive Publication Date: 2014-05-07
SUZHOU UNIV
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Problems solved by technology

[0010] However, the current spatial light modulator parallel lithography technology faces the following problems: first, when there are slanted lines in the exposed pattern, the pattern aliasing problem inevitably occurs; second, there is a gap between the slanted line and the straight line in the exposed pattern The problem of uneven line width
[0018] 1. After using high-power miniaturization, the data resolution will be finer, resulting in a double increase in the amount of graphic data
[0019] 2. Due to the characteristics of the miniaturization optical system, the high-magnification miniaturization design technology is more difficult, and the exposure field of view of the high-magnification miniaturization system is small, so the writing efficiency is low

Method used

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  • Parallel laser direct writing system and photoetching method
  • Parallel laser direct writing system and photoetching method
  • Parallel laser direct writing system and photoetching method

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Embodiment Construction

[0040] As mentioned in the background technology, the existing parallel laser direct writing system, due to the spatial light modulator as a pattern generator, has a jagged problem when displaying oblique lines, resulting in uneven lines in all oblique lines obtained by exposure At the same time, the line widths of oblique lines and straight lines are not equal, so that the graphics obtained by the exposure of the entire system cannot obtain uniform line width values.

[0041] Therefore, the present invention designs a new parallel laser direct writing system aiming at the problems existing in the prior art. The parallel laser direct writing system uses two or more spatial light modulators, and different spatial light modulators are set at different angles. One of the spatial light modulators is used as a standard display, and the displayed graphics are horizontal The direction of the straight line where the pixels are located is the standard horizontal direction, and the dire...

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Abstract

The invention discloses a parallel laser direct writing system and a photoetching method. Two or more graphic generators are provided, and different graphic generators are placed according to different angles so that the diagonal of each angle can be displayed through the horizontal or vertical straight line pixel in corresponding graphic generator, the sawtooth phenomenon on the original diagonal is eliminated, equal line width between the straight line and the diagonal is guaranteed, the line width uniformity of the graphic is improved, and the precision and quality of the photoetching process are improved.

Description

technical field [0001] The invention relates to the technical fields of mask plate preparation, maskless photolithography and laser direct writing, in particular to a parallel laser direct writing system and a photolithography method. Background technique [0002] In industries such as semiconductors, flat panel displays, and high-density printed circuits, high-precision micro-nano pattern writing is one of the key core processes. It is used for pattern writing such as mask plate preparation, which is called patterning. In the semiconductor industry, the line width requirement is at the sub-micron to nanometer level, mainly using electron beam lithography technology, while in the flat panel display and high-density printed circuit industries, the line width requirement is basically above 1 μm, and laser patterning lithography technology is widely used . [0003] Laser patterning lithography is also known as maskless lithography. [0004] In the field of laser patterning li...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
Inventor 浦东林胡进朱鹏飞魏国军袁晓峰陈林森
Owner SUZHOU UNIV
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