Photoresist treatment method and preparation method of semiconductor devices

Abstract

The invention discloses a photoresist treatment method comprising the following steps: providing a substrate, wherein patterned photoresist is arranged on the substrate; spin coating a chemical micro-material on the photoresist to form a protection film on the surface of the photoresist; and treating the protection film through a low-temperature low-energy plasma treatment technique. The photoresist treatment method disclosed by the invention can effectively improve the surface density of the photoresist on the condition of ensuring the line width so as to avoid or reduce defects.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a photoresist processing method and a semiconductor device preparation method. Background technique [0002] Advanced integrated circuit chips usually integrate multiple functional devices. However, multiple functional devices generally need to correspond to different field effect transistors (FETs). For example, a multiple gate oxide process is a common method for fabricating different field effect transistors in the same chip. [0003] In the prior art, the multi-gate oxide structure is generally prepared by the following methods: [0004] Firstly, a substrate 100 is provided. The substrate 100 has a first region 010 and a second region 020. Generally, the substrate 100 also includes an isolation structure 101, such as Figure 1a shown; [0005] Then, prepare a silicon oxide film 110 on the substrate 100, such as Figure 1b shown; [0006] Next, prepare ...

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Problems solved by technology

[0011] However, there are still some problems that need to be solved in the existing method for preventing photoresist defects from being produced in the wet etching process: in method 1), the baking temperature should not be too high, and the baking time should not be too long, otherwise it will cause the pattern deformation of the photoresist 120, and will adversely affect production throughput (throughput)

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