Photoresist cleanout fluid

Abstract

The invention discloses photoresist cleanout fluid. The cleanout fluid comprises alcohol amine, tetrahydrofurfuryl alcohol and benzotriazole and/or derivatives thereof. The photoresist cleanout fluid can be used for removing photoresist in light-emitting diodes (LED) and semiconductors and basically does not attack base materials, such as metallic aluminium and copper, and moreover, the cleanout fluid system has high water resistance, and the operating window is widened.

Description

technical field [0001] The invention relates to a photoresist cleaning solution. Background technique [0002] In the usual LED and semiconductor manufacturing processes, a photoresist mask is formed on the surface of some materials, and the pattern is transferred after exposure. After the required pattern is obtained, the remaining photoresist needs to be stripped before the next process. Engraving. This process requires complete removal of unwanted photoresist without etching any substrate. [0003] At present, the photoresist cleaning solution is mainly composed of polar organic solvents, strong alkali and / or water, and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in the cleaning solution or rinsing the semiconductor wafer with the cleaning solution. One of them is a photoresist cleaning solution containing water, and its water content is generally greater than 5%; as JP1998239865 discloses a cleaning solution of an aqueous ...

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a photoresist solution for the existing photoresist cleaning solution, which has insufficient cleaning ability or is highly corrosive to wafer patterns and substrates and has a small operating window. A photoresist cleaning solution with strong cleaning ability, low corrosion to semiconductor wafer patterns and substrates, and high water resistance, while providing a large operating window

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