Method for removing low dielectric material on silicon wafer surface

Abstract

The invention relates to the technical field of manufacture for semiconductor integrated circuits, in particular to a method for removing low-k dielectric materials on the surfaces of silicon wafers. The method includes steps of providing a silicon wafer with low-k dielectric materials on the surfaces of the silicon wafer; performing ultraviolet curing process on the silicon wafer, then cleaning the silicon wafer by the aid of hydrofluoric acid with certain concentration by a wet process, cleaning the silicon wafer again by the aid of deionized water and filling nitrogen to dry the silicon wafer. The method has the advantages that an ultraviolet curing technology is performed before the silicon wafer is cleaned by the wet process, so that the low-k dielectric materials on the surfaces of the silicon wafer are cured, and can be effectively removed after the silicon wafer is cleaned by another wet process, the silicon wafer cannot be damaged easily, and can be reused after being processed by the method, and the production cost is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a method for removing low-dielectric materials on the surface of a silicon wafer. Background technique [0002] With the continuous advancement of semiconductor process technology, when semiconductor devices are reduced to the deep submicron range, it is necessary to use low dielectric materials to reduce the RC delay time caused by parasitic resistance and parasitic capacitance, so as to achieve the purpose of improving device performance. [0003] Currently, the formation process of the low dielectric material is generally a chemical vapor deposition process. In order to achieve a stable deposition effect, daily inspections of chemical vapor deposition machines are required. The silicon wafers that are routinely inspected need to be recycled and reused, which requires the removal of low-dielectric materials deposited on the silicon wafers...

AI Technical Summary

Problems solved by technology

[0007] According to the problem in the prior art that the surface of silicon wafers is prone to be scrapped due to the deposition of more low-dielectric materials during point inspection of chemical vapor deposition machines, a method for removing low-dielectric materials on the surface of silicon wafers is provided. The method of electrical materials can effectively remove low-dielectric materials deposited on the surface of silicon wafers. At the same time, the process is simple and the production cost is low, which is suitable for popularization and application.

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