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Preparation method of 6lif/10b4c composite neutron conversion thin film for 4h-sic based neutron detector

A 10B4C, neutron detector technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of film layer peeling and interface bonding performance deterioration.

Inactive Publication Date: 2015-10-07
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the film is thicker, residual tensile stress is generated, which makes the interface bonding performance worse and the film layer falls off.

Method used

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  • Preparation method of 6lif/10b4c composite neutron conversion thin film for 4h-sic based neutron detector
  • Preparation method of 6lif/10b4c composite neutron conversion thin film for 4h-sic based neutron detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The 4H-SiC based neutron detector of the present embodiment is used 6 LiF / 10 B 4 C Composite conversion thin film preparation process is as follows:

[0029] a. Put the substrate material 4H-SiC matrix into acetone and absolute ethanol in sequence for 20 minutes of ultrasonic cleaning, take out and dry after fully cleaning;

[0030] b. The single crystal 4H-SiC substrate cleaned in step a, 6 Li concentration of 90% 6 LiF target and 10 B concentration of 96% 10 B 4 The C target is placed in the vacuum chamber of the reactive magnetron sputtering coating vacuum furnace, and then vacuumed to 5.0×10 -4 Pa, the impurities in the single crystal 4H-SiC substrate were removed by biased reverse sputtering cleaning, the power of reverse sputtering cleaning was 120 W, and the bias voltage was -500 V; the impurities were removed by pre-sputtering cleaning 6 LiF target and 10 B 4 C target impurity, pre-sputter cleaning power is 120 W, bias voltage is -100 V; reverse spu...

Embodiment 2

[0036] The 4H-SiC based neutron detector of the present embodiment is used 6 LiF / 10 B 4 C Composite conversion film preparation process is basically the same as in Example 1, the difference is that the reaction magnetron sputtering coating vacuum furnace is evacuated to 4.0 × 10 -4Pa, the power of reverse sputter cleaning is 100 W, the bias voltage is -400 V; the power of pre-sputter cleaning is 100 W, the bias voltage is -100 V, the flow rate of argon gas is 160 Sccm, reverse sputter cleaning and pre-sputter cleaning The vacuum degree of sputter cleaning operation is 1.5 Pa absolute pressure. The power of sputtering deposition is 100 W, the flow rate of argon gas is 150 Sccm, and the vacuum degree of sputtering deposition operation is an absolute pressure of 0.43 Pa; 10 B 4 The C coating sputtering deposition operation process is a continuous operation process. sputter deposition 6 LiF / 10 B 4 The thicknesses of the C coatings were 1.5 μm and 0.5 μm, respectively, an...

Embodiment 3

[0038] in deposition 6 LiF / 10 B 4 C composite conversion film process, deposition 6 LiF and 10 B 4 The thickness of the C coating also affects the detection efficiency of the detector. This example 6 LiF / 10 B 4 Coating equipment and other processing conditions used for the preparation of C conversion film are all the same as in Example 1, and keep 6 LiF / 10 B 4 The total thickness of C composite conversion film is controllable at 2.0 μm, which is selected during deposition 6 LiF coating thickness is 1.0 μm, 10 B 4 The thickness of the C coating is 1.0 μm, and the prepared conversion film layer can also pass through 6 Li(n,α) 3 H and 10 B(n, α) 7 α produced by Li reaction, 7 Li and T particle energy spectrum test the incident neutron signal to improve the detection efficiency.

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Abstract

The invention discloses a preparation process method for a 6LiF / BC4 composite neutron conversion film for a 4H-SiC-matrix neutron detector. The preparation process method adopts a radiofrequency magnetron sputtering technology, and mainly comprises the following steps of: plating pre-treatment, bias re-sputtering cleaning, pre-sputtering cleaning, 6LiF / BC4 composite conversion film deposition, and the like, wherein the plating pre-treatment is ultrasonic cleaning by acetone and ethyl alcohol; the re-sputtering cleaning and the pre-sputtering cleaning aim at removing a 4H-SiC matrix and target impurities. The 6LiF / BC4 conversion film layer obtained by the preparation method disclosed by the invention is resistant to irradiation damage and high temperature, accurately controllable in thickness, excellent in bonding property with the 4H-SiC matrix, strong in preparation process repeatability, and easy for realization of industrial promotion. The neutron detector synthesised from the 6LiF / BC4 composite conversion film layer prepared by the preparation method and a semiconductor 4H-SiC device has the actual measurement effects of low noise, high neutron detection efficiency, high gamma inhibition property, and the like.

Description

technical field [0001] The invention belongs to the application field of neutron detection technology, and relates to a novel small-volume and high-efficiency 4H-SiC-based neutron detector for measuring incident neutron intensity 6 LiF / 10 B 4 C Composite conversion film preparation process. Background technique [0002] The research work on neutron energy spectrum measurement technology based on Si devices started in the 1930s, and all the principles and methods of neutron energy spectrum measurement were basically clarified by 1960. Since then, the focus of research has shifted to how to broaden the range of energy spectrum measurement, Great progress has been made in improving the detection efficiency of the detector and improving the energy resolution. However, the research and application of sandwich neutron detectors based on Si devices has not progressed since the 1990s because the radiation resistance of detectors cannot be solved. [0003] In recent years, with...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/35
Inventor 刘波蒋勇张彦坡
Owner SICHUAN UNIV
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