Method for forming fin transistors

Abstract

The invention provides a forming method of a fin type transistor. The method comprises the following steps that a substrate is provided, a plurality of fin parts are formed on the surface of the substrate, a blocking layer is arranged on the top surface of the fin parts, a first covering layer covering the fin parts is formed on the surface of the substrate, the first covering layer is flattened until the blocking layer is exposed, a second covering layer is formed on the surfaces of the blocking layer and the first covering layer by adopting a deposition process; and the second covering layer and the first covering layer are etched, and pseudo grids are formed. The forming method of the fin type transistor provided by the embodiment has the advantage that the qualification rate is high.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a fin transistor. Background technique [0002] With the continuous development of semiconductor process technology, process nodes are gradually reduced, and gate-last (gate-last) process has been widely used to obtain an ideal threshold voltage and improve device performance. However, when the feature size (CD, Critical Dimension) of the device is further reduced, even if the gate-last process is adopted, the structure of the conventional MOS field effect transistor can no longer meet the requirements for device performance, and multi-gate devices have been widely used as a substitute for conventional devices. s concern. [0003] Fin transistor (FinFET) is a common multi-gate device, figure 1 A schematic diagram of a three-dimensional structure of a fin transistor in the prior art is shown. Such as figure 1 As shown, the fin transistor includes...

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Problems solved by technology

[0004] However, the uniformity of electrical properties of fin transistors formed by the prior art is poor, and the yield rate is low

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