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A kind of cyclic impregnation preparation cu 2 znsn(s 1‑x ,se x ) 4 nanocrystalline thin film method

A cyclic impregnation, nanocrystal technology, applied in nanotechnology, nanotechnology, sustainable manufacturing/processing, etc., can solve the problems of long material preparation time, low utilization rate of raw materials, restricting large-scale production, etc., and achieve good market application Prospects, abundant raw material reserves, the effect of reducing production costs

Active Publication Date: 2017-11-17
QINGDAO UNIV OF SCI & TECH
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Problems solved by technology

[0003] Currently, Cu 2 ZnSn(S 1-x ,Se x ) 4 The preparation methods of thin films are mainly divided into vacuum method and non-vacuum method. Vacuum method mainly includes sputtering method, vapor deposition method and evaporation method. Low, poor repeatability, which directly restricts its large-scale production; non-vacuum methods mainly include electrochemical deposition, sol-gel method and screen printing method, etc. Compared with vacuum methods, non-vacuum methods do not require expensive vacuum equipment , so more development potential
Recently, Cu has been prepared by continuous ionic layer adsorption reaction. 2 ZnS x Thin film and ZnS thin film stack prefabricated layer structure or Cu 2 S thin film and ZnSnS x Film laminated prefabricated layer structure, and then annealed to obtain the patent of copper-zinc-tin-sulfur film (application number 201110189391.2), but the technology is complicated and the material preparation takes a long time

Method used

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  • A kind of cyclic impregnation preparation cu <sub>2</sub> znsn(s <sub>1‑x</sub> ,se <sub>x</sub> ) <sub>4</sub> nanocrystalline thin film method
  • A kind of cyclic impregnation preparation cu <sub>2</sub> znsn(s <sub>1‑x</sub> ,se <sub>x</sub> ) <sub>4</sub> nanocrystalline thin film method
  • A kind of cyclic impregnation preparation cu <sub>2</sub> znsn(s <sub>1‑x</sub> ,se <sub>x</sub> ) <sub>4</sub> nanocrystalline thin film method

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Embodiment 1

[0025] This embodiment prepares Cu 2 ZnSnS 4 The specific process of nanocrystalline thin film is:

[0026] (1), respectively prepare CuSO with a concentration of 0.02mol / L 4 ·5H 2O solution, 0.01mol / L ZnSO 4 ·7H 2 O solution, 0.02mol / L SnCl 2 2H 2 O solution and 0.16mol / L Na 2 S·9H 2 O;

[0027] (2) Preparation of cationic precursor solution: Measure 10ml of CuSO with a graduated cylinder 4 ·5H 2 O solution, 10ml of ZnSO 4 ·7H 2 O solution and 10ml of SnCl 2 2H 2 After O, mix them together and place them in a 50ml beaker, add 5.845g of urea, stir evenly at room temperature, transfer to a water bath at 50°C, adjust the pH to 3.0 with dilute ammonia water, and obtain a cationic precursor;

[0028] (3), the preparation of anion precursor solution: measure the Na of 30ml respectively with measuring cylinder 2 S·9H 2 The O solution was placed in a 50ml beaker, transferred to a water bath at 50°C, and adjusted to a pH of 6.0 with dilute hydrochloric acid to obtain ...

Embodiment 2

[0033] The specific preparation process of the present embodiment is:

[0034] (1), respectively prepare a CuCl solution with a concentration of 0.03mol / L and a ZnCl solution with a concentration of 0.015mol / L 2 solution, 0.03mol / L SnCl 4 ·5H 2 O solution and 0.24mol / L CH 3 CSNH 2 ;

[0035] (2) To prepare cationic precursor solution, measure 15ml of CuCl solution and 15ml of ZnCl with graduated cylinder 2 solution and 15ml of SnCl 4 ·5H 2 O, then mix together and place in a 100ml beaker, add 9.009g of urea, stir evenly at room temperature, transfer to a water bath at 60°C, adjust its pH to 3.0 with dilute ammonia water, and obtain a cationic precursor;

[0036] (3) To prepare anion precursor solution, measure 45ml of CH with a graduated cylinder 3 CSNH 2 The solution is placed in a 100ml beaker, transferred to a 60°C water bath, and adjusted to a pH of 6.0 with dilute hydrochloric acid to obtain an anion precursor;

[0037] (4), measure 45ml of deionized water with ...

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Abstract

The invention belongs to the technical field of nano crystal film preparation and relates to a method for preparing a Cu2ZnSn (S1-x, Sex)4 nano crystal film through circulating impregnation. Firstly, a positive ion precursor solution and a negative ion precursor solution are prepared, then deionized water with the same level of the positive ion precursor solution is added into two reaction vessels respectively to form a circulating impregnation reaction system, an ammonia solution and hydrochloric acid are used to adjust the pH values of the positive ion precursor solution and the negative ion precursor solution respectively, a substrate is subjected to orderly alternative circulating impregnation with the positive ion precursor solution, the deionized water, the negative ion precursor solution and the deionized water as a period to obtain a precursor film, and finally the prepared precursor film is subjected to annealing and cooling to obtain the Cu2ZnSn (S1-x, Sex)4 nano crystal film. The method has the advantages of simple preparation process, simple used equipment, rich reserve of needed raw materials, simple operation, low cost, strong controllability of the film thickness of obtained product and large development space and is suitable for the preparation of a large area film.

Description

Technical field: [0001] The invention belongs to the technical field of nanocrystal film preparation, and relates to a novel Cu 2 ZnSn(S 1-x ,Se x ) 4 The preparation method of solar cell light absorption layer, especially a kind of cyclic impregnation preparation Cu 2 ZnSn(S 1-x ,Se x ) 4 method for nanocrystalline thin films. Background technique: [0002] With the increasingly serious problem of environmental pollution and the depletion of non-renewable resources, it has become a common problem for all countries in the world to seek clean and non-polluting alternative energy to achieve sustainable development. Solar energy, as an abundant and infinitely renewable clean energy, has attracted more and more attention. With the widespread use of photovoltaic modules, how to improve the photoelectric conversion efficiency of cells and reduce costs is currently a research hotspot in photovoltaic power generation. At present, the industrialization of solar cells is domi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/032
CPCB82Y30/00H01L31/0322Y02E10/541Y02P70/50
Inventor 董立峰马帅曹磊隋静
Owner QINGDAO UNIV OF SCI & TECH
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