A large-area two-dimensional gallium nitride thin film and its preparation method

Abstract

The invention discloses a method for preparing a large-area two-dimensional gallium nitride film. A tube furnace with dual temperature zones is used as a reaction device. A porcelain boat with built-in urea and a ceramic boat coated with urea are respectively placed in the two temperature zones in the tube furnace. For the sapphire substrate of gallium nitrate solution, under the condition of protective atmosphere, the temperature of the porcelain boat and the sapphire substrate are respectively raised, and the heating rate is controlled to reach 130-138°C at the porcelain boat and 850-950°C at the sapphire substrate. The gas and the gallium nitrate solution decomposition product of the sapphire substrate are vapor-phase deposited to form a large-area two-dimensional gallium nitride film. The preparation method of the large-area two-dimensional gallium nitride thin film of the present invention has the characteristics of strong thickness controllability, large area, good uniformity and fast growth speed.

Description

technical field [0001] The invention relates to the technical field of gallium nitride materials, in particular to a large-area two-dimensional gallium nitride thin film and a preparation method thereof. Background technique [0002] Semiconductors are important products directly related to national interests, and are also important core components related to integrated circuits. The chips made by semiconductors are related to the economic lifeline of the country and the foundation of national rejuvenation. According to the data, the current cost of importing domestic chips has far exceeded the cost of crude oil imports. That is to say, the semiconductor chip manufacturing technology with integrated circuits as the main body has received more and more attention from the state. However, there is still a large gap between my country's semiconductor chip manufacturing technology and developed countries such as the United States, Britain, and Japan. How to further narrow this g...

AI Technical Summary

Problems solved by technology

Although it is currently reported that ultra-thin GaN films can be synthesized, how to grow single-layer GaN is still a difficult problem

[0011] Finally, there is the issue of film quality

The currently reported methods for growing 2D GaN thin films are the above three methods, but when the thin film is reduced to a few nanometers or even a few tenths of a nanometer, the uniformity and compactness of the thin film are also facing important challenges.

Images