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Solar battery formed by laminating thin films and passivating back sides of thin films and preparation method thereof

A solar cell and rear passivation technology, which is applied in the field of solar cells, can solve problems such as unsatisfactory passivation effect, affecting cell efficiency, poor rear passivation, etc., to achieve enhanced electric field effect passivation, improve back field effect, damage reduction effect

Active Publication Date: 2013-09-18
TRINASOLAR CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] At present, the existing technology is relatively good at passivating the front side of crystalline silicon cells, and the passivation at the back side is poor, which directly affects the efficiency of cells. For the passivation of P-type crystalline silicon solar cells, silicon dioxide or alumina is mainly used. Silicon oxide passivation, because silicon oxide is made of thermal oxidation, it is easy to cause damage to silicon wafers under high temperature conditions. If only aluminum oxide is used for passivation, aluminum oxide has less hydrogen and negative ions, and the passivation Not ideal

Method used

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  • Solar battery formed by laminating thin films and passivating back sides of thin films and preparation method thereof
  • Solar battery formed by laminating thin films and passivating back sides of thin films and preparation method thereof

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Effect test

Embodiment 1

[0032] Such as figure 1 As shown, a solar cell with backside passivation of laminated films, it includes P-type crystalline silicon substrate 1, front passivation layer 2, front electrode layer 3, hydrogenated amorphous silicon layer 4, back electrode layer 6, back electric field Layer 7 and metal oxide layer 5 with negative fixed charge, P-type crystalline silicon substrate 1 has a front and a back, front passivation layer 2 is deposited on the front of P-type crystalline silicon substrate 1, front electrode layer 3 is located on the upper surface of the front passivation layer 2, the hydrogenated amorphous silicon layer 4 is deposited on the back surface of the P-type crystalline silicon substrate 1, the metal oxide layer 5 is deposited on the lower surface of the hydrogenated amorphous silicon layer 4, and the back surface The electrode layer 6 is located on the lower surface of the metal oxide layer 5 , and the back electric field layer 7 is located on the lower surface of...

Embodiment 2

[0037] Such as figure 1 As shown, a solar cell with backside passivation of laminated films, it includes P-type crystalline silicon substrate 1, front passivation layer 2, front electrode layer 3, hydrogenated amorphous silicon layer 4, back electrode layer 6, back electric field Layer 7 and metal oxide layer 5 with negative fixed charge, P-type crystalline silicon substrate 1 has a front and a back, front passivation layer 2 is deposited on the front of P-type crystalline silicon substrate 1, front electrode layer 3 is located on the upper surface of the front passivation layer 2, the hydrogenated amorphous silicon layer 4 is deposited on the back surface of the P-type crystalline silicon substrate 1, the metal oxide layer 5 is deposited on the lower surface of the hydrogenated amorphous silicon layer 4, and the back surface The electrode layer 6 is located on the lower surface of the metal oxide layer 5 , and the back electric field layer 7 is located on the lower surface of...

Embodiment 3

[0042] Such as figure 1 As shown, a solar cell with backside passivation of laminated films, it includes P-type crystalline silicon substrate 1, front passivation layer 2, front electrode layer 3, hydrogenated amorphous silicon layer 4, back electrode layer 6, back electric field Layer 7 and metal oxide layer 5 with negative fixed charge, P-type crystalline silicon substrate 1 has a front and a back, front passivation layer 2 is deposited on the front of P-type crystalline silicon substrate 1, front electrode layer 3 is located on the upper surface of the front passivation layer 2, the hydrogenated amorphous silicon layer 4 is deposited on the back surface of the P-type crystalline silicon substrate 1, the metal oxide layer 5 is deposited on the lower surface of the hydrogenated amorphous silicon layer 4, and the back surface The electrode layer 6 is located on the lower surface of the metal oxide layer 5 , and the back electric field layer 7 is located on the lower surface of...

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Abstract

The invention discloses a solar battery formed by laminating thin films and passivating back sides of thin films and a preparation method thereof. The solar battery comprises a P-type crystalline silicon substrate, a front side passivation layer, a front side electrode layer, a hydrogenated amorphous silicon layer, a back side electrode layer, a back side electric field layer and a metallic oxide layer with negative fixed charge, wherein the P-type crystalline silicon substrate comprises a front side and a back side; the front side passivation layer is deposited on the front side of the P-type crystalline silicon substrate; the front side electrode layer is positioned on the upper surface of the front side passivation layer; the hydrogenated amorphous silicon layer is deposited on the back side of the P-type crystalline silicon substrate; the metallic oxide layer is deposited on the lower surface of the hydrogenated amorphous silicon layer; the back side electrode layer is positioned on the lower surface of the metallic oxide layer; and the back side electric field layer is positioned on the lower surface of the back side electrode layer. With the adoption of the solar battery and the preparation method thereof, the passivation effect of the back side of P-type crystalline silicon is improved, the defect state density of the back side is reduced, and the solar battery transformation efficiency is improved; and the solar battery can be easily prepared at low temperature.

Description

technical field [0001] The invention relates to a solar cell with passivation on the back of laminated films and a preparation method thereof, belonging to the technical field of solar cells. Background technique [0002] At present, the existing technology is relatively good at passivating the front side of crystalline silicon cells, and the passivation at the back side is poor, which directly affects the efficiency of cells. For the passivation of P-type crystalline silicon solar cells, silicon dioxide or alumina is mainly used. Silicon oxide passivation, because silicon oxide is made of thermal oxidation, it is easy to cause damage to silicon wafers under high temperature conditions. If only aluminum oxide is used for passivation, aluminum oxide has less hydrogen and negative ions, and the passivation The transformation effect is not ideal. Contents of the invention [0003] The technical problem to be solved by the present invention is to overcome the defects of the p...

Claims

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Application Information

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IPC IPC(8): H01L31/048H01L31/18
CPCY02E10/50Y02P70/50
Inventor 张勇
Owner TRINASOLAR CO LTD