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Backside illuminated CMOS image sensor and manufacturing method thereof

A technology of image sensor and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, radiation control devices, electrical components, etc., can solve problems such as electrical crosstalk, and achieve the effect of improving quality and electronic transition barrier

Inactive Publication Date: 2013-10-02
OMNIVISION TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The object of the present invention is to provide a back-illuminated CMOS image sensor and its manufacturing method, to solve the problem of electrical crosstalk in the existing back-illuminated CMOS image sensor

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  • Backside illuminated CMOS image sensor and manufacturing method thereof

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Embodiment Construction

[0025] Hereinafter, the back-illuminated CMOS image sensor and the manufacturing method thereof proposed by the present invention will be further described in detail with reference to the drawings and specific embodiments. According to the following description and claims, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and all use imprecise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.

[0026] The core idea of ​​the present invention is to block electrical crosstalk by forming an isolation structure made of a high-K medium between every two adjacent photodiodes. Since the material of the isolation structure is a high-K dielectric layer, it increases the electronic transition barrier, thereby being able to block electrical crosstalk, thereby improving the quality of the back-illuminated CMOS image se...

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Abstract

The invention provides a backside illuminated CMOS (Complementary Metal Oxide Semiconductor) image sensor and a manufacturing method thereof. The backside illuminated CMOS image sensor comprises a wafer, a plurality of photodiodes formed in the wafer, and isolation structures formed in the wafer and isolating every two adjacent photodiodes, wherein the isolation structures are made of high-K dielectric material. The isolation structures made of the high-K dielectric material are formed between every two adjacent photodiodes for obstructing electrical cross talk, and the isolation structures are made of high-K dielectric material layers, so that the isolation structures improve an electron transition potential barrier, and can obstruct the electrical cross talk, and the quality of the backside illuminated CMOS image sensor is improved.

Description

Technical field [0001] The invention relates to the technical field of image sensors, in particular to a back-illuminated CMOS image sensor and a manufacturing method thereof. Background technique [0002] The image sensor is developed on the basis of photoelectric technology. The so-called image sensor is a sensor that can sense optical image information and convert it into a usable output signal. The image sensor can increase the visual range of the human eye, allowing people to see the microscopic world and the macroscopic world that are invisible to the naked eye, see what happens in places that people cannot reach temporarily, and see various physical and chemical changes beyond the visual range of the naked eye. The occurrence and development of life, physiology, disease, etc. It can be seen that image sensors play a very important role in people's culture, sports, production, life and scientific research. It can be said that modern human activities can no longer leave th...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L21/8238
Inventor 费孝爱邢家明
Owner OMNIVISION TECH (SHANGHAI) CO LTD
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