Miniature hemispherical resonant gyroscope based on SOI (Silicon on Insulator) silicon slice and manufacturing method of miniature hemispherical resonant gyroscope

A technology of hemispherical resonant gyroscope and hemispherical resonant oscillator, which is applied in the process of producing decorative surface effects, microstructure technology, microstructure devices, etc., can solve the problems of excessive release, insufficient release, large working area, etc., and achieve increased Large driving force and detection capacitance, good for driving and signal detection, easy to be corroded

Inactive Publication Date: 2013-10-09
NORTHWESTERN POLYTECHNICAL UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

The support surface of this hemispherical harmonic oscillator is determined by the support surface of the outer ring support body, and the size of the outer ring support surface is determined by the wet etching time, solution concentration, stirring speed, etc., so the size of the support surface during processing Difficult to control, it may be insufficient to release, so that the supporting surface is too large, and it may be released too much, resulting in too small supporting surface, both of which seriously affect the working performance of the device; at the same time, the size of the working surface of the driving electrode and the sensitive electrode and the doping depth Related, due to the limitations of the doping process, a large working area cannot be obtained, and there are also disadvantages such as too small driving force and difficult detection of sensitive signals.

Method used

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  • Miniature hemispherical resonant gyroscope based on SOI (Silicon on Insulator) silicon slice and manufacturing method of miniature hemispherical resonant gyroscope
  • Miniature hemispherical resonant gyroscope based on SOI (Silicon on Insulator) silicon slice and manufacturing method of miniature hemispherical resonant gyroscope
  • Miniature hemispherical resonant gyroscope based on SOI (Silicon on Insulator) silicon slice and manufacturing method of miniature hemispherical resonant gyroscope

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Embodiment Construction

[0026] In this example, a kind of figure 2 The miniature hemispherical resonant gyroscope shown in the figure includes four sets of drive electrodes 16 and sensitive electrodes 17 separated from each other by structural silicon grooves 14. The drive electrodes 16 and sensitive electrodes 17 are evenly distributed around the circumference and form a hemispherical resonator cavity. 5, and the driving electrode 16 and the sensitive electrode 17 are suspended on the base silicon body 3 through the electrical insulating layer 2; The gap between the electrodes 17 is 2 μm, and the material of the hemispherical resonator 8 and the support body 11 is conductive polysilicon. It is characterized in that: the support body 11 is a cylindrical structure formed by depositing polysilicon; the driving electrode 16 and the sensitive electrode 17 are electrode structures formed by separating the structural silicon body 1 by the structural silicon groove 14 .

[0027] The preparation method of ...

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Abstract

The invention discloses a miniature hemispherical resonant gyroscope based on an SOI (silicon on insulator) silicon slice and a manufacturing method of the miniature hemispherical resonant gyroscope, belonging to the field of micro/nano processing and manufacturing. A driving electrode 16 and a sensitive electrode 17 of the gyroscope are composed of independent silicon blocks formed by dividing a structural silicon body 1 internally provided with a hemispherical hollow cavity through a plurality of radial structural silicon grooves 14, the area of the driving electrode 16 and the sensitive electrode 17 relative to a hemispherical harmonic oscillator 8 is increased, and the driving force and the detecting capacitance are increased to facilitate the driving and signal detection of the hemispherical harmonic oscillator 8; and meanwhile, the independent silicon blocks formed by the divided structural silicon body 1 enables a silicon dioxide sacrificial layer 6 to be corroded more easily. The gyroscope processing method disclosed by the invention is used for processing a supporting body hollow cavity 10 through ICP (inductively coupled plasma) etching and depositing conductive polysilicon to form a cylindrical supporting body 11, so that the size of the supporting surface of the supporting body is controllable to beneficially control the vibration mode distribution of the hemispherical harmonic oscillator 8; and meanwhile, when processing the driving electrode 16 and the sensitive electrode 17, the back surfaces of the driving electrode 16 and the sensitive electrode 17 are firstly processed to protect the hemispherical harmonic oscillator 8 from being corroded.

Description

technical field [0001] The invention relates to a micro hemispherical resonant gyroscope based on SOI silicon chip and its preparation method, belonging to micro / nano processing [0002] manufacturing field. Background technique [0003] With the development of science and technology and the progress of society, consumer electronics, automotive products and guided weapons have further increased the requirements for the accuracy and reliability of micro-mechanical gyroscopes, which promote the continuous production of micro-mechanical gyroscopes with new structures and new principles, among which micro-hemispheres The resonant gyroscope has the advantages of high precision, high reliability and long life, and has become one of the new gyroscopes that have been studied in recent years. [0004] refer to image 3 , the existing miniature hemispherical resonator gyroscope, comprising a silicon body 18 located on an insulating layer 21, a hemispherical resonator cavity 5 is arra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01C19/56B81C1/00
Inventor 谢建兵郝永存常洪龙张和民苑伟政
Owner NORTHWESTERN POLYTECHNICAL UNIV
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