Method for Improving the Uniformity of Electrical Parameters of GP CMOS Devices

Abstract

The invention relates to a method for improving uniformity of electrical parameters of GP CMOS components. The method for improving the uniformity of the electrical parameters of the GP CMOS components is applied to the preparation technology of semiconductor devices by adopting a stress memorization technology. The method comprises the steps of providing a substrate with a gate structure arranged on the surface, arranging a drain region and a source region on the two sides, close to the gate structure, of the substrate, preparing a buffer layer to cover the surface of the gate structure and the exposed surface of the substrate, preparing a stress layer to cover the surface of the buffer layer, carrying out etching on the stress layer to retain parts of the stress layer covering the surface of the gate structure, adopting a spike anneal process to carry out heat treatment on the substrate and grid electrodes, removing the remained stress layer, and adopting a laser annealing process to carry out heat treatment on the substrate and the grid electrodes to stop the ions in the source region and the drain region from further diffusing. The GP CMOS prepared by adopting the method has stable saturation currents and threshold voltages.

Description

technical field [0001] The invention relates to a method for improving device performance in a semiconductor device preparation process, in particular to a method for improving the uniformity of electrical parameters of a GPCMOS device. Background technique [0002] In recent years, with the widespread use of mobile phones and portable electronic products, people's requirements for computing speed have gradually increased. [0003] With the progress and development of CMOS technology, high-performance devices (Generic Plus Complementary Metal Oxide Semiconductor, referred to as: GPCMOS) are more and more widely used in electronic products. Among them, the most common ones are used for graphics chip processing, graphics cards, CPUs, fast switches for communications, servers, supercomputers, weather forecasts, missile trajectory simulations, virtual simulations of scientific experiments, etc. All of the above applications require high computing speed , The requirements for fl...

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Problems solved by technology

[0009] It can be seen that there is not yet an effective method that does not change much in the existing GPSMT process and can improve the uniformity of device electrical parameters.

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