Plasma vapor deposition material two-sided locally-growing device and method

A growth device and plasma technology, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems of complex operation and low efficiency, and achieve the effect of simple operation, improved work efficiency and wide application prospects

Inactive Publication Date: 2013-10-23
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] One of the purposes of the present invention is to provide a device for localized growth of double-sided materials by plasma vapor deposition to solve the problems of complex operation and low efficiency in the existing material growth by dielectric barrier discharge plasma technology

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  • Plasma vapor deposition material two-sided locally-growing device and method
  • Plasma vapor deposition material two-sided locally-growing device and method
  • Plasma vapor deposition material two-sided locally-growing device and method

Examples

Experimental program
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Effect test

Embodiment 1

[0035] Embodiment 1: Device for localized growth of double-sided materials by plasma vapor deposition.

[0036] Such as figure 1 As shown, an air inlet 10 and an air extraction port 11 are opened on the wall of the vacuum reaction chamber 1, the air inlet 10 is a three-way nozzle, one nozzle is connected to the injection device of the discharge gas, and the other nozzle is connected to the chemical gas phase Injection device for gases required for deposition. Two water electrodes 6 are arranged in the vacuum reaction chamber 1 .

[0037] The form of the water electrode 6 is: a discharge medium plate 3 is sealed at both ends of the plexiglass tube 9 to form a cylindrical airtight dielectric container; a copper ring 2 is built in the dielectric container and is connected to the copper ring 2 After the lead wire passes through the dielectric container, it is connected to the positive or negative electrode of the plasma power supply 7 arranged outside the vacuum reaction chamber...

Embodiment 2

[0042] Embodiment 2: A method for localized growth of double-sided materials by plasma vapor deposition.

[0043] The method for local growth of double-sided materials in the present invention is carried out in the above-mentioned local growth device for double-sided materials, and specifically includes the following steps:

[0044] a. Inject discharge gas into the vacuum reaction chamber 1 through the air inlet 10 until the air pressure in the vacuum reaction chamber 1 reaches 0.3-1 atmospheric pressure;

[0045] b. Turn on the plasma power supply 7, control the discharge voltage to 4-7.8kV, and the discharge condition of the power supply frequency to 60kHz. A discharge is generated in the electric gap 8, and plasma patterns are formed on both sides of the material growth substrate 5;

[0046] c. After the plasma pattern is stabilized, the gas required for chemical vapor deposition is injected into the vacuum reaction chamber 1 through the gas inlet 10, and the gas is extrac...

Embodiment 3

[0048] Example 3: Local growth of double-sided materials with the same discharge air gap thickness on both sides.

[0049] In the double-sided material local growth device of the present invention, the thickness of the material growth substrate 5 is 1 mm, and the two insulator frames 4 are square planar frames with an inner side length of 30 mm, and the thickness of the two insulator frames 4 (that is, two placed The thickness of the electric gap 8) is 1.5mm, the injected discharge gas is air, the pressure is 0.3 atmospheres, the power frequency of the plasma power supply 7 is 60kHz, and the peak value of the discharge voltage is 4.8kV. A hexagonal double layer plasma pattern can be produced, see figure 2 (a).

[0050] The argon content of the injected discharge gas is 93%, the air content is 7%, the air pressure is 1 atmosphere, and the discharge voltage is 7.8kV. Other conditions are the same as figure 2 When the conditions in (a) are the same, a quadrilateral double-lay...

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Abstract

The invention relates to a plasma vapor deposition material two-sided-locally-growing device and a method. The device comprises a vacuum reaction chamber, a plasma power supply, two water electrodes, two insulator frames and one or two material growing substrates. The insulator frames are disposed between the water electrodes, thereby defining a discharge gap thickness and a discharge zone. The discharge gap thickness or the discharge area can be adjusted by changing the insulator frames. After injection of discharge gas and gas needed for chemical vapor deposition into the vacuum reaction chamber, the plasma power supply is switched on, plasma columns are formed in discharge gaps by discharging, and local growth of thin-film materials in the material growing substrates can be achieved. According to the device and the method, by configuration of the two discharge gaps, material local growth can be performed on both sides of each of the substrates. The device and the method have advantages of simple operation, convenience and efficiency, and work efficiency that can be doubled. Identical or different thin-film materials can be formed at a time. The device and the method have a wide application prospect in industry.

Description

technical field [0001] The invention relates to a plasma application technology, in particular to a plasma vapor deposition double-sided material localized growth device and method. Background technique [0002] CVD (Chemical Vapor Deposition) - Chemical Vapor Deposition, is a chemical technique used to produce solid materials with high purity and good performance. The reaction chamber is composed of at least a substrate with a substrate and a syringe. Wherein the injector includes independently formed first and second gas passages and first and second gas injection tubes connecting the respective gas passages at respective inlets for injecting the respective first and second gases onto the base, so The above injectors inject different gases independently. The semiconductor industry uses this technique to grow conductive thin films. A typical CVD process is to expose the wafer (substrate) to one or more different precursors, and a chemical reaction or chemical decompositi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/50C23C16/04
Inventor 董丽芳赵杨申中凯李犇贺亚峰
Owner HEBEI UNIVERSITY
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