Double annealing process for reducing back diffusion of impurity in polysilicon ingot
A technology of impurity reverse diffusion and secondary annealing, which is applied in the growth of polycrystalline materials, crystal growth, single crystal growth, etc., can solve the problems of uneven internal temperature distribution, intensified reverse diffusion of impurities, and prolonged ingot production cycle, etc. Achieve uniform internal temperature distribution, improve annealing effect, and reduce production cost
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Embodiment 1
[0019] A secondary annealing process for polycrystalline silicon ingots to reduce impurity back-diffusion is carried out according to the following steps:
[0020] (1) In the polysilicon ingot casting process, the first annealing is performed after the crystal growth is completed, and the temperature is lowered to 1350°C for 30 minutes, and then kept for 30 minutes;
[0021] (2) Cool the polysilicon ingot to room temperature at a cooling rate of 60°C / h;
[0022] (3) Squaring the polysilicon ingot, first removing the scraps of the polysilicon ingot, and then adjusting the slot distance of the squarer to 157mm to obtain a square ingot;
[0023] (4) Put the square ingot into the heat treatment furnace for the second annealing, the annealing temperature is 1370°C, keep it warm for 2h, and then cool the square ingot to room temperature according to the cooling rate of 60°C / h;
[0024] (5) The square ingot can be polished.
[0025] Among them, step (1) is the first annealing, the ...
Embodiment 2
[0027] A secondary annealing process for polycrystalline silicon ingots to reduce impurity back-diffusion is carried out according to the following steps:
[0028] (1) In the polysilicon ingot casting process, the first annealing is performed after the crystal growth is completed, and the temperature is lowered to 1270°C for 40 minutes, and then kept for 40 minutes;
[0029] (2) Cool the polysilicon ingot to room temperature at a cooling rate of 80°C / h;
[0030] (3) Squaring the polysilicon ingot, first removing the scraps of the polysilicon ingot, and then adjusting the slot distance of the squarer to 157mm to obtain a square ingot;
[0031] (4) Put the square ingot into the heat treatment furnace for the second annealing, the annealing temperature is 1250°C, keep it warm for 3h, and then cool the square ingot to room temperature according to the cooling rate of 80°C / h;
[0032] (5) The square ingot can be polished.
[0033] Among them, the step (1) is the first annealing, ...
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