Double annealing process for reducing back diffusion of impurity in polysilicon ingot

A technology of impurity reverse diffusion and secondary annealing, which is applied in the growth of polycrystalline materials, crystal growth, single crystal growth, etc., can solve the problems of uneven internal temperature distribution, intensified reverse diffusion of impurities, and prolonged ingot production cycle, etc. Achieve uniform internal temperature distribution, improve annealing effect, and reduce production cost

Inactive Publication Date: 2015-06-17
QINGDAO XINSHIJI SOLAR ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing process, after the crystal growth is completed, the annealing process is carried out through a long-term high-temperature state. Under the high-temperature annealing state, the reverse diffusion of impurities around the ingot is intensified, resulting in a decrease in its yield; long-term annealing makes The ingot production cycle is lengthened and the production efficiency is reduced
At the same time, in the cooling stage after annealing, due to the large size of the ingot, the internal temperature distribution is uneven, which seriously affects the annealing effect

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] A secondary annealing process for polycrystalline silicon ingots to reduce impurity back-diffusion is carried out according to the following steps:

[0020] (1) In the polysilicon ingot casting process, the first annealing is performed after the crystal growth is completed, and the temperature is lowered to 1350°C for 30 minutes, and then kept for 30 minutes;

[0021] (2) Cool the polysilicon ingot to room temperature at a cooling rate of 60°C / h;

[0022] (3) Squaring the polysilicon ingot, first removing the scraps of the polysilicon ingot, and then adjusting the slot distance of the squarer to 157mm to obtain a square ingot;

[0023] (4) Put the square ingot into the heat treatment furnace for the second annealing, the annealing temperature is 1370°C, keep it warm for 2h, and then cool the square ingot to room temperature according to the cooling rate of 60°C / h;

[0024] (5) The square ingot can be polished.

[0025] Among them, step (1) is the first annealing, the ...

Embodiment 2

[0027] A secondary annealing process for polycrystalline silicon ingots to reduce impurity back-diffusion is carried out according to the following steps:

[0028] (1) In the polysilicon ingot casting process, the first annealing is performed after the crystal growth is completed, and the temperature is lowered to 1270°C for 40 minutes, and then kept for 40 minutes;

[0029] (2) Cool the polysilicon ingot to room temperature at a cooling rate of 80°C / h;

[0030] (3) Squaring the polysilicon ingot, first removing the scraps of the polysilicon ingot, and then adjusting the slot distance of the squarer to 157mm to obtain a square ingot;

[0031] (4) Put the square ingot into the heat treatment furnace for the second annealing, the annealing temperature is 1250°C, keep it warm for 3h, and then cool the square ingot to room temperature according to the cooling rate of 80°C / h;

[0032] (5) The square ingot can be polished.

[0033] Among them, the step (1) is the first annealing, ...

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Abstract

The invention belongs to the field of polysilicon purification, and particularly relates to a double annealing process for reducing back diffusion of impurities in a polysilicon ingot. The secondary annealing process includes the steps of (1) first annealing after crystal growth in polysilicon ingot process; (2) cooling the polysilicon ingot to room temperature; (3) dividing the polysilicon ingot to obtain a square ingot; (4) placing the square ingot into an annealing oven for second annealing, and then cooling the square ingot to room temperature; and (5) polishing the square ingot. The double annealing process has the advantages that: (1) leftover materials with high content of impurities has been removed during dividing, thus reverse diffusion can be reduced in later annealing and yield is improved; (2) the size of a silicon block is relatively small, so the internal temperature distribution in the annealing step is uniform and the annealing effect can be improved; and (3) production cycle is reduced, production efficiency is improved, and production cost is reduced by 5%.

Description

technical field [0001] The invention belongs to the field of polysilicon purification, and in particular relates to a secondary annealing process for reducing impurity back-diffusion in polysilicon ingots. Background technique [0002] At present, my country has become the world's largest energy production and consumption country, but the per capita energy consumption level is still very low. With the continuous development of the economy and society, my country's energy demand will continue to grow. In response to the current energy shortage, countries around the world are thinking deeply, and are working hard to improve energy efficiency, promote the development and application of renewable energy, and reduce the impact on energy consumption. Reliance on imported oil to enhance energy security. [0003] As one of the important development directions of renewable energy, solar photovoltaic power generation has developed rapidly in recent years, and its proportion is increas...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/02C30B29/06
Inventor 谭毅李鹏廷王峰熊华江安广野姜大川
Owner QINGDAO XINSHIJI SOLAR ENERGY TECH CO LTD
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