The invention discloses a method for increasing the minority
carrier lifetime of the top of a
silicon ingot by gettering. The
ingot is cast by utilizing a polycrystal semi-fusion technology, and argonis used as a protection gas in the whole
ingot casting process. At the growth last period of the ingot
crystal growth, namely when the height of a residual
silicon liquid is 5-10 mm, gettering crystals are added into the residual
silicon liquid, the gettering crystals are completely melted and are uniformly mixed with the silicon liquid, and then the ingot grows again. The minority
carrier lifetime of the top of the silicon ingot is improved by 0.5-1.0
microsecond through the use of a gettering principle of high-concentration
phosphorus doping diffusion, and in particular, the
solid concentration is increased in a region of heavy
phosphorus diffusion due to the influence of
Fermi level. Meanwhile extremely serious
dislocation is formed by heavy
phosphorus doping in the region, and gathering and gettering are performed on
metal impurities at the top of the ingot at the
dislocation grain boundary. At the same time, rapid growth is completed, low-temperature annealing is carried out, andsolid-phase
reverse diffusion in the annealing process is reduced, and finally the minority
carrier lifetime of the silicon ingot is improved, so that the targeted high-lifetime silicon ingot is obtained.