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43 results about "Reverse diffusion" patented technology

Reverse diffusion refers to a situation where the transport of particles (atoms or molecules) in a medium occurs towards regions of higher concentration gradients, opposite to that observed during diffusion. This phenomenon occurs during phase separation and is described by the Cahn–Hilliard equation. Reverse diffusion also refers to when water is forced from a region of lower concentration to high. It can occur in osmosis.

Plaintext associated image encryption algorithm based on hyperchaos Chen system

The invention relates to an image encryption algorithm based on a chaotic system, used for solving security problems that the image encryption algorithm is small in key space and poor in capacity of resisting to plaintext attacks. The algorithm comprises four modules such as a hyperchaos sequence generator, a forward diffusion module, a scrambling module and a reverse diffusion module. Firstly thehyperchaos Chen system is used for generating four chaotic pseudorandom sequences, a chaotic sequence and a plaintext image are used for performing forward diffusion operation to acquire a matrix A,then computation is performed in combination with the pseudorandom sequences and information related to the plaintext image to acquire a scrambled coordinate, the coordinate scrambling is performed onthe matrix A to acquire a matrix B, and at last the chaotic pseudorandom sequences and the matrix B are used for performing reverse diffusion operation to acquire a ciphertext image C. An experimentsimulation result expresses that the algorithm can improve the defect that the image encryption algorithm is small in key space, effectively resist to statistical attacks, differential attacks, and chosen-plaintext attacks, and achieve good encryption effect.
Owner:CHONGQING UNIV OF POSTS & TELECOMM

Gas sensor

The present invention provides an oxygen sensor which comprises the following components: an electrolyte interlayer (110) which is provided with at least one through hole; a measuring electrode (112) which is arranged at one side of the electrolyte interlayer; and a counter electrode (114) which is arranged at the other side of the electrolyte interlayer. The dimension of at least one through hole satisfies the following relationship: A<liquid phase> / l<interlayer> <6.5*10<3>(A<entry> / l<entry>), wherein A<liquid phase> is the total sectional area of at least one through hole, l<interlayer> is the thickness of the through hole, A<entry> is the sectional area of the air inlet hole, and A<entry> is the length of the air inlet hole. The through hole can comprise a hydrophilic liquid-absorptionmaterial. The position is departed from the electric field formed by the measuring electrode and the counter electrode. The electrolyte interlayer can also be a hydrophilic micropore array formwork. In the oxygen sensor of the invention, the electrolyte interlayer structure which is provided with at least one through hole not only can be taken as an ion conductor for communicating the measuring electrode with the counter electrode but also can prevent the reverse diffusion of the oxygen. At the same time, the prepared oxygen sensor not only has excellent interference resistance but also has the advantage small volume.
Owner:RAE SYST SHANGHAI

Method for encrypting bit-level synchronous promiscuous diffusion images and pixel-level annular diffusion images

The invention provides a method for encrypting bit-level synchronous promiscuous diffusion images and pixel-level annular diffusion digital images. According to the method, bit-level encryption and pixel-level encryption are carried out on an image by utilizing a chaos sequence generated by piecewise linear chaotic map, so that ideal encryption effect can be obtained through one round of encryption. In the bit-level encryption stage, random blocking is carried out on the image by utilizing the chaos sequence to destroy the correlation of adjacent pixels, a low four-bit plane, a previous ciphertext pixel and a key stream are combined, synchronous promiscuous diffusion encryption is carried out on a high four-bit plane with a high information amount, overall scrambling is carried out on thelow four-bit plane with an extremely low information amount through cyclic shift, and inter-block diffusion is realized through parameter transfer. In the pixel-level encryption stage, a transverse sequential diffusion and longitudinal reversed diffusion combined annular diffusion method is adopted, so that phenomena such as plaintext sensitivity non-uniformity and break points caused by diffusionof each pixel along one direction are avoided.
Owner:NORTHWESTERN POLYTECHNICAL UNIV

Method for generating color garbage classification two-dimensional code

The invention discloses a method for generating a color garbage classification two-dimensional code. The method comprises the steps of coding the garbage bag identity information to generate a uniquegarbage bag identity code; extracting an identity display code and an identity hiding code, and respectively converting the identity display code and the identity hiding code into the numerical data;respectively calculating to obtain an initial value, parameters, an initial iteration step number and an extraction interval of the chaotic system, and performing iteration on the Logistic chaotic mapping to generate a chaotic sequence; respectively scrambling the ciphertext numerical values in the three custom numerical value type data and ciphertext numerical value corresponding relation tables;and meanwhile, carrying out the corresponding forward diffusion encryption and reverse diffusion encryption on different numerical values of the identity hidden code conversion data, generating an identity hidden encryption code according to the scrambled corresponding relation table, and then generating a garbage classification code through combination, so that the color garbage classification two-dimensional code is obtained. The method for generating the color garbage classification two-dimensional code provided by the invention is simple and feasible, has very strong safety and is not easy to crack, and the generated color garbage classification two-dimensional code is convenient for guiding garbage classification, can effectively protect the privacy of the user in garbage bag identity hidden information, and has the uniqueness and safety.
Owner:IANGSU COLLEGE OF ENG & TECH

Preparation method of nanometer composite forward osmosis membrane with organic silane grafted multi-wall carbon nanometer tubes embedded into polyamide separation layer

The invention discloses a preparation method of a nanometer composite forward osmosis membrane with organic silane grafted multi-wall carbon nanometer tubes embedded into a polyamide separation layer. The carbon nanometer tube is added into concentrated acid to obtain the carbon nanometer tubes with carboxyls on the surface; thionyl chloride is used for acyl chlorization on the carbon nanometer tubes; further, reaction is performed with organic silane containing amino groups or sulfydryls; the organic silane is grafted onto the carbon nanometer tubes; macromolecular membrane materials are prepared into a porous organic filtering membrane; a thin separation layer is polymerized on the surface interface of a support layer of the porous organic filtering membrane; the organic silane grafted carbon nanometer tubes are used as nanometer filling materials to be added into an oil phase; the organic silane grafted carbon nanometer tubes are embedded into a separation layer to obtain a target product. The method provided by the invention has the advantages that the water flux of the product is greatly improved; the reverse diffusion quantity of a draw solution solute is reduced; in addition, good anti-pollution capability is shown; the membrane belongs to a novel forward osmosis membrane with a wide application potential.
Owner:ZHEJIANG UNIV OF TECH

Image encryption method and apparatus

The invention provides an image encryption method and apparatus. According to the method, by adopting a target image matrix of sparse representation according to a preset orthogonal sparse base and anoriginal image matrix of a plaintext image, the computational complexity is reduced. A measurement result matrix is obtained by performing compression measurement on the target image matrix through acompressed sensing model, wherein the compressed sensing model is obtained by performing tensor product processing according to a chaotic matrix and a generalized permutation matrix; and the compressed sensing model is obtained by performing the tensor product processing by matrixes generated by two chaotic systems separately, so the compressed sensing model has interrelation that is small enough, and thus the possibility of successful restoration is improved. Quantitative processing is performed on the measurement result matrix to obtain a quantitative matrix subjected to the quantitative processing; and forward diffusion processing and reverse diffusion processing are performed on the quantitative matrix to obtain an encrypted image matrix, the encrypted image matrix corresponds to a ciphertext image, and the forward diffusion processing and the reverse diffusion processing can ensure more uniform image energy distribution and further improve the system security and the image encryption performance.
Owner:BEIJING UNIV OF POSTS & TELECOMM

Double annealing process for reducing back diffusion of impurity in polysilicon ingot

The invention belongs to the field of polysilicon purification, and particularly relates to a double annealing process for reducing back diffusion of impurities in a polysilicon ingot. The secondary annealing process includes the steps of (1) first annealing after crystal growth in polysilicon ingot process; (2) cooling the polysilicon ingot to room temperature; (3) dividing the polysilicon ingot to obtain a square ingot; (4) placing the square ingot into an annealing oven for second annealing, and then cooling the square ingot to room temperature; and (5) polishing the square ingot. The double annealing process has the advantages that: (1) leftover materials with high content of impurities has been removed during dividing, thus reverse diffusion can be reduced in later annealing and yield is improved; (2) the size of a silicon block is relatively small, so the internal temperature distribution in the annealing step is uniform and the annealing effect can be improved; and (3) production cycle is reduced, production efficiency is improved, and production cost is reduced by 5%.
Owner:QINGDAO XINSHIJI SOLAR ENERGY TECH CO LTD

Garbage classification code generation method

The invention discloses a garbage classification code generation method. The method comprises the following steps: encoding garbage bag identity information to generate a unique garbage bag identity code; extracting an identity display code and an identity hidden code, and converting the identity display code into numerical data; carrying out calculation to obtain an initial value, parameters, aninitial iteration step number and an iteration interval step number of a chaotic system, and carrying out iteration to generate a chaotic sequence; scrambling the identity hidden codes in the garbageidentity codes by utilizing a position change rule before and after chaotic signal sorting; performing conversion between characters and numerical values; obtaining a corresponding numeric sequence; performing corresponding forward diffusion encryption and reverse diffusion encryption according to different numerical values in the numeric sequence to complete conversion of the numerical values andcharacters, thereby generating an identity hidden encryption code, and further combining and generating the garbage classification code, and obtaining the garbage classification two-dimensional codewith the garbage classification mark at the same time. The garbage classification code generation method provided by the invention is simple and feasible, has very high safety and is not easy to crack, the generated garbage classification code is convenient for guiding garbage classification, the privacy of a user in garbage bag identity hidden information can be effectively protected, and the garbage classification code has uniqueness and safety.
Owner:IANGSU COLLEGE OF ENG & TECH

Active carbon box sampler with diffusion barrier

ActiveCN102607897ATransmittance has little effectControl water absorptionWithdrawing sample devicesActivated carbonDiffusion barrier
The invention discloses an active carbon box sampler with a diffusion barrier, which comprises a circular aluminum cover with a cover, the diffusion barrier, a stainless steel pressing sheet, a stainless steel net, a location snap ring and active carbon, wherein the active carbon is arranged in the aluminum box, the stainless steel net is placed on the active carbon, and the stainless steel pressing sheet provided with the diffusion barrier is placed on the stainless steel net and is located by the location snap ring and then sealed by the cover. In the invention, the sampling efficiency is increased through selecting the active carbon with high radon adsorption efficiency, the influence of water in the air to a detection result is reduced through additionally arranging the diffusion barrier and changing the structure of the sample, and reverse diffusion of radon is reduced; and the concentration of the radon in a room is detected by using the sampler disclosed by the invention, thus the reliability of the detection result is improved. The sampler is suitable for massively detecting the radon in the room for a current construction project, and has the advantages of stable detection result, simplicity in operation, saving of a great quantity of manpower works, and the like.
Owner:GUANGZHOU TESTING CENTRE OF CONSTRUCTION QUALITY AND SAFETY CO LTD +1

Selective doping method for solar cell based on reverse diffusion

The invention relates to a selective doping method for a solar cell based on reverse diffusion. The method includes the steps: diffusing a silicon slice in an aerobic environment at a high temperature to form a PN junction and oxidizing the upper surface of the silicon slice; removing an oxidation layer outside a top electrode area of the silicon slice; depositing an intrinsic amorphous silicon layer on the upper surface of the silicon slice; diffusing the silicon slice in a wet-oxygen environment at a high temperature, reversely diffusing doping elements in a non-top electrode area into the amorphous silicon layer, diffusing doping elements in an oxidation layer of the top electrode area to the top electrode area and oxidizing the amorphous silicon layer and the non-top electrode area of the surface of the silicon slice to form an oxidation layer; and removing the oxidation layer on the surface of the silicon slice to selectively dope the solar cell based on reverse diffusion. By means of reverse diffusion, impurities in the non-top electrode area are absorbed by amorphous silicon, the doping concentration of the non-top electrode area is reduced, the top electrode area is secondarily doped, the doping concentration difference between the top electrode area and the non-top electrode area is further increased, and selective doping effects are improved.
Owner:NANTONG UNIVERSITY

Selective doping method for solar cell

The invention relates to a selective doping method for a solar cell. The selective doping method includes the steps: depositing phosphorus silicon glass on the upper surface of a silicon slice; diffusing the deposited silicon slice at a high temperature and diffusing phosphorus into the silicon slice to form a PN junction; removing the phosphorus silicon glass outside a top electrode area of the upper surface of the silicon slice; depositing an intrinsic amorphous silicon layer on the upper surface of the silicon slice; diffusing the silicon slice in an oxygen-free environment at a high temperature, diffusing phosphorus not in the top electrode area of the silicon slice into the amorphous silicon layer and further diffusing phosphorus in the phosphorus silicon glass in the top electrode area to the top electrode area; and removing the amorphous silicon layer and the phosphorus silicon glass on the surface of the silicon slice to selectively dope the solar cell by reverse diffusion. By means of reverse diffusion, impurities in a non-top electrode area are absorbed by amorphous silicon, the doping concentration of the non-top electrode area is reduced, the top electrode area is secondarily doped, the doping concentration difference between the top electrode area and the non-top electrode area is further increased, and selective doping effects are improved.
Owner:NANTONG UNIVERSITY

Method for reverse diffusion

The invention discloses a method for reverse diffusion. The method comprises the following steps: placing a silicon wafer to a diffusion furnace, inletting small N2 containing a phosphorus source, N2 and O2 to the diffusion furnace, and carrying out phosphorus diffusion on the silicon wafer under the temperature ranging from 800 DEC to 820 DEC; closing the small N2, keeping the temperature to be 820-840 DEC, inletting N2 and O2 to the diffusion furnace, and carrying out oxygen-inletting short-time drive-in on the silicon wafer; inletting N2 to the diffusion furnace and carrying out high-temperature nitrogen drive-in on the silicon wafer under the temperature of 850-870 DEC; inletting N2 to the diffusion furnace and carrying out reverse diffusion on the silicon wafer under the temperature of 690-720 DEC; and under the protection of the N2, taking the silicon wafer out of the furnace. With the diffusion method provided in the invention, and under the condition of the same doping amount, phosphorus atoms are allowed to have relatively-low doping density on the surface of the silicon wafer, thereby reducing surface recombination and improving an open-circuit voltage and photoelectric conversion efficiency of a solar cell.
Owner:CHINT NEW ENERGY TECH (HAINING) CO LTD

Chinese character string encryption and decryption method

The invention discloses a Chinese character string encryption and decryption method. The method comprises the following steps of converting a certain section of Chinese character string into the high-order and low-order numerical sequences; then obtaining a reverse diffusion encrypted ciphertext sequence of the high-order numerical sequence and a forward diffusion encrypted ciphertext sequence of the low-order numerical sequence through the loop operation of the single iteration of a chaotic system, the reverse diffusion encryption of the elements of the high-order numerical sequence one by one, the forward diffusion encryption of the elements of the low-order numerical sequence one by one and the parameter adjustment series operation of the chaotic system; and finally, carrying out numerical value and character conversion on the reverse diffusion encrypted ciphertext sequence and the forward diffusion encrypted ciphertext sequence to obtain an encrypted ciphertext of the section of Chinese character string, and decrypting the ciphertext through a similar method to restore the original Chinese character string. According to the method, the Chinese character string is encrypted and decrypted by utilizing the password characteristic of the chaotic signal, so that the known/selected plaintext attack resistance and the ciphertext-only attack resistance are good, and the encryption and decryption safety of the Chinese character string is ensured.
Owner:NANTONG UNIVERSITY

Method for increasing minority carrier lifetime of top of silicon ingot by gettering

The invention discloses a method for increasing the minority carrier lifetime of the top of a silicon ingot by gettering. The ingot is cast by utilizing a polycrystal semi-fusion technology, and argonis used as a protection gas in the whole ingot casting process. At the growth last period of the ingot crystal growth, namely when the height of a residual silicon liquid is 5-10 mm, gettering crystals are added into the residual silicon liquid, the gettering crystals are completely melted and are uniformly mixed with the silicon liquid, and then the ingot grows again. The minority carrier lifetime of the top of the silicon ingot is improved by 0.5-1.0 microsecond through the use of a gettering principle of high-concentration phosphorus doping diffusion, and in particular, the solid concentration is increased in a region of heavy phosphorus diffusion due to the influence of Fermi level. Meanwhile extremely serious dislocation is formed by heavy phosphorus doping in the region, and gathering and gettering are performed on metal impurities at the top of the ingot at the dislocation grain boundary. At the same time, rapid growth is completed, low-temperature annealing is carried out, andsolid-phase reverse diffusion in the annealing process is reduced, and finally the minority carrier lifetime of the silicon ingot is improved, so that the targeted high-lifetime silicon ingot is obtained.
Owner:宁夏申和新材料科技有限公司
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