Two-step annealing process for polycrystalline silicon ingot
An annealing process, polysilicon technology, applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of uneven internal temperature distribution, intensified reverse diffusion of impurities, and prolonged ingot production cycle, so as to reduce impurities Effects of reverse diffusion, reduction of head-to-tail temperature difference, and production cost reduction
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Embodiment 1
[0033] The silicon raw material is annealed for the first time after the heating, melting, and crystal growth processes in the ingot casting process. The heating temperature of the ingot furnace is gradually lowered from 1395 °C to 1230 °C, the cooling time is 40 minutes, and the temperature is kept for 90 minutes. Cool the silicon ingot to the secondary annealing temperature at a cooling rate of 1.5°C / min.
[0034] Lower the temperature of the silicon ingot after the first annealing by reducing the heating power and closing the heat shield, and then perform the second annealing, gradually reducing the heating temperature of the ingot furnace from 1230°C to 1100°C, and the cooling time is 30 minutes , and keep it warm for 60 minutes. After the second annealing is completed, the silicon ingot is cooled to 400° C. at a cooling rate of 80° C. / h, and then the subsequent process is carried out.
Embodiment 2
[0036] The silicon raw material is annealed for the first time after the heating, melting, and crystal growth processes in the ingot casting process. The heating temperature of the ingot furnace is gradually reduced from 1400 °C to 1255 °C, the cooling time is 50 minutes, and the temperature is kept for 90 minutes. The cooling rate is 1.7°C / min to cool the silicon ingot to the secondary annealing temperature
[0037] Lower the temperature of the silicon ingot after the first annealing by reducing the heating power and closing the heat shield, and then perform the second annealing, gradually reducing the heating temperature of the ingot furnace from 1255°C to 1110°C, and the cooling time is 40 minutes , and keep it warm for 100 minutes. After the second annealing is completed, the silicon ingot is cooled to 400° C. at a cooling rate of 95° C. / h, and then the subsequent process is carried out.
Embodiment 3
[0039] The silicon raw material is annealed for the first time after the heating, melting and crystal growth process in the ingot casting process. The heating temperature of the ingot casting furnace is gradually lowered from 1400 °C to 1275 °C, the cooling time is 50 minutes, and the temperature is maintained for 110 minutes. The cooling rate is 1.9°C / min to cool the silicon ingot to the secondary annealing temperature
[0040]Lower the temperature of the silicon ingot after the first annealing by reducing the heating power and closing the heat shield, and then perform the second annealing, gradually reducing the heating temperature of the ingot furnace from 1275°C to 1120°C, and the cooling time is 50 minutes , and keep it warm for 120 minutes. After the second annealing is completed, the silicon ingot is cooled to 400° C. at a cooling rate of 110° C. / h, and then the subsequent process is carried out.
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