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Two-step annealing process for polycrystalline silicon ingot

An annealing process, polysilicon technology, applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of uneven internal temperature distribution, intensified reverse diffusion of impurities, and prolonged ingot production cycle, so as to reduce impurities Effects of reverse diffusion, reduction of head-to-tail temperature difference, and production cost reduction

Inactive Publication Date: 2016-11-09
CHINA UNITED NORTHWEST INST FOR ENG DESIGN & RES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing process, after the crystal growth is completed, the annealing process is carried out through a long-term high-temperature state. Under the high-temperature annealing state, the reverse diffusion of impurities around the ingot is intensified, resulting in a decrease in its yield; long-term annealing makes The ingot production cycle is lengthened and the production efficiency is reduced
At the same time, in the cooling stage after annealing, due to the large size of the ingot, the internal temperature distribution is uneven, which seriously affects the annealing effect

Method used

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  • Two-step annealing process for polycrystalline silicon ingot
  • Two-step annealing process for polycrystalline silicon ingot
  • Two-step annealing process for polycrystalline silicon ingot

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The silicon raw material is annealed for the first time after the heating, melting, and crystal growth processes in the ingot casting process. The heating temperature of the ingot furnace is gradually lowered from 1395 °C to 1230 °C, the cooling time is 40 minutes, and the temperature is kept for 90 minutes. Cool the silicon ingot to the secondary annealing temperature at a cooling rate of 1.5°C / min.

[0034] Lower the temperature of the silicon ingot after the first annealing by reducing the heating power and closing the heat shield, and then perform the second annealing, gradually reducing the heating temperature of the ingot furnace from 1230°C to 1100°C, and the cooling time is 30 minutes , and keep it warm for 60 minutes. After the second annealing is completed, the silicon ingot is cooled to 400° C. at a cooling rate of 80° C. / h, and then the subsequent process is carried out.

Embodiment 2

[0036] The silicon raw material is annealed for the first time after the heating, melting, and crystal growth processes in the ingot casting process. The heating temperature of the ingot furnace is gradually reduced from 1400 °C to 1255 °C, the cooling time is 50 minutes, and the temperature is kept for 90 minutes. The cooling rate is 1.7°C / min to cool the silicon ingot to the secondary annealing temperature

[0037] Lower the temperature of the silicon ingot after the first annealing by reducing the heating power and closing the heat shield, and then perform the second annealing, gradually reducing the heating temperature of the ingot furnace from 1255°C to 1110°C, and the cooling time is 40 minutes , and keep it warm for 100 minutes. After the second annealing is completed, the silicon ingot is cooled to 400° C. at a cooling rate of 95° C. / h, and then the subsequent process is carried out.

Embodiment 3

[0039] The silicon raw material is annealed for the first time after the heating, melting and crystal growth process in the ingot casting process. The heating temperature of the ingot casting furnace is gradually lowered from 1400 °C to 1275 °C, the cooling time is 50 minutes, and the temperature is maintained for 110 minutes. The cooling rate is 1.9°C / min to cool the silicon ingot to the secondary annealing temperature

[0040]Lower the temperature of the silicon ingot after the first annealing by reducing the heating power and closing the heat shield, and then perform the second annealing, gradually reducing the heating temperature of the ingot furnace from 1275°C to 1120°C, and the cooling time is 50 minutes , and keep it warm for 120 minutes. After the second annealing is completed, the silicon ingot is cooled to 400° C. at a cooling rate of 110° C. / h, and then the subsequent process is carried out.

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Abstract

The invention discloses a two-step annealing process for a polycrystalline silicon ingot. The two-step annealing process comprises the following steps that silicon raw materials are subjected to procedures of heating, smelting and crystal growing in an ingot casting process and then subjected to primary annealing, the heating temperature of an ingot furnace is gradually reduced to 1230-1285 DEG C from 1395-1405 DEG C, the cooling time is 40-60 min, and the temperature is kept for 90-120 min; the silicon ingot subjected to primary annealing is cooled by reducing the heating power and closing a heat isolation plate, secondary annealing is carried out, the heating temperature of the ingot furnace is gradually reduced to 1100-1130 DEG C from 1230-1285 DEG C, the cooling time is 30-60 min, the temperature is kept for 60-120 min, and then following procedures are carried out. By means of the method, the silicon ingot quality is remarkably improved, the proportions of fragments, unfilled corners, broken edges and cracks in the slicing process are reduced, the number of output silicon wafers is increased, the production period is shortened, the production efficiency is improved, and the production cost is effectively reduced.

Description

【Technical field】 [0001] The invention belongs to the field of polysilicon purification, and in particular relates to a two-step annealing process for polysilicon ingots. 【Background technique】 [0002] At present, my country has become the world's largest energy production and consumption country, but the per capita energy consumption level is still very low. With the continuous development of the economy and society, my country's energy demand will continue to grow. In response to the current energy shortage, countries around the world are thinking deeply, and are working hard to improve energy efficiency, promote the development and application of renewable energy, and reduce the impact on energy consumption. Reliance on imported oil to enhance energy security. [0003] As one of the important development directions of renewable energy, solar photovoltaic power generation has developed rapidly in recent years, and its proportion is increasing. According to the Medium and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B33/02
CPCC30B29/06C30B33/02
Inventor 田伟刘波波田进赵俊贺利乐
Owner CHINA UNITED NORTHWEST INST FOR ENG DESIGN & RES
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