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A kind of super junction Schottky semiconductor device and its preparation method

A semiconductor and Schottky potential technology, applied in the field of super junction Schottky semiconductor devices, can solve the problems affecting the reverse breakdown characteristics of the device, high on-resistance, etc.

Active Publication Date: 2017-02-15
北海惠科半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional trench Schottky diode has a sudden electric field distribution curve in the drift region, which affects the reverse breakdown characteristics of the device. At the same time, the traditional trench Schottky diode has a high on-resistance

Method used

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  • A kind of super junction Schottky semiconductor device and its preparation method
  • A kind of super junction Schottky semiconductor device and its preparation method

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Embodiment 1

[0023] figure 1 It is a sectional view of a super junction Schottky semiconductor device of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.

[0024] A super-junction Schottky semiconductor device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located on the substrate layer 1, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 1E16 / CM 3 ; Schottky barrier junction 5, ...

Embodiment 2

[0033] figure 2 It is a sectional view of a super junction Schottky semiconductor device of the present invention, combined below figure 2 The semiconductor device of the present invention will be described in detail.

[0034] A super junction Schottky semiconductor device, comprising: a substrate layer 1, which is a semiconductor silicon material of P conductivity type, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located on the substrate layer 1, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 1E16 / CM 3 ; Schottky barrier junction...

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Abstract

The invention discloses a super junction Schottky semiconductor device. When the semiconductor device is accessed to a certain reverse bias voltage, charge compensation is formed by a second conductive semiconductor material and a first conductive semiconductor material, a super junction structure is formed, the reverse breakdown voltage of the device is enhanced, and characteristics of conduction or blocking of the device are improved. Meanwhile, when the semiconductor device is accessed to a certain forward bias voltage, a first type Schottky barrier junction (assuming that the first conductive semiconductor layer adopts an N type semiconductor material) is in the forward bias conduction state, and a second type Schottky barrier junction (assuming that the second conductive semiconductor layer adopts a P type semiconductor material) is in the reverse bias cut-off state, therefore when in the forward conduction state, the device is still a conductive device with a single carrier, and minority carrier injection does not exist in the conductive device with the single carrier. The device has good switching characteristics. The invention also provides a preparation method of the super junction Schottky semiconductor device.

Description

technical field [0001] The invention relates to a super junction Schottky semiconductor device, and also relates to a preparation method of the super junction Schottky semiconductor device. The semiconductor device of the present invention is a basic structure for manufacturing power rectifying devices. Background technique [0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have disadvantages such as large reverse leakage current and cannot be used in high-voltage environments. [0003] Schottky diodes can be fabricated using a number of different layout techniques, the most common being planar layout. The traditional trench Schottky diode has a sudden electric field dist...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/872H01L21/329
Inventor 朱江
Owner 北海惠科半导体科技有限公司
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