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Cooling method for treating system

A processing system and reactor technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as consuming a long cooling time, reducing the production capacity of PECVD system, and affecting the utilization rate of PECVD system equipment , to achieve the effect of improving equipment utilization rate, reducing cooling cost and shortening cooling time

Active Publication Date: 2013-11-06
理想万里晖真空装备(泰兴)有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, there are many deficiencies in the above-mentioned schemes: Scheme 1 takes a long cooling time, and it takes about 12 hours to cool the plasma reactor from 160°C to 80°C, which seriously affects the equipment of the PECVD system The utilization rate greatly reduces the production capacity of the PECVD system; scheme 2 also takes a long time for cooling; compared with scheme 1 and scheme 2, although the cooling time consumed by scheme 3 has been reduced, it still takes 8 hours of cooldown

Method used

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Effect test

Embodiment 1

[0067] The processing system is a PECVD system. During normal operation, the plasma reactor of the PECVD system is heated, and gas is introduced into the second air inlet of the plasma reactor to keep the temperature at 160 °C, and at the same time, the upper electrode, the RF high frequency is applied to the lower electrode to plasma the gas in the plasma reactor, and the solar cell thin film is produced on the glass substrate by PECVD process.

[0068] When the PECVD system needs to be maintained, stop heating the plasma reactor, apply RF high frequency to the upper electrode and the lower electrode in the plasma reactor, feed hydrogen into the second air inlet of the plasma reactor, and Keep the door between the plasma reactor and the vacuum chamber closed, hydrogen can enter the vacuum chamber through the gap between the door and the plasma reactor, and close the plasma reactor when the pressure of the plasma reactor reaches 2.5mbar The second air inlet, the second air ou...

Embodiment 2

[0070] The processing system is a PECVD system. During normal operation, the plasma reactor of the PECVD system is heated, and gas is introduced into the second air inlet of the plasma reactor to keep the temperature at 160 °C, and at the same time, the upper electrode, the RF high frequency is applied to the lower electrode to plasma the gas in the plasma reactor, and the solar cell thin film is produced on the glass substrate by PECVD process.

[0071] When the PECVD system needs to be maintained, stop heating the plasma reactor, apply RF high frequency to the upper electrode and the lower electrode in the plasma reactor, feed hydrogen into the second air inlet of the plasma reactor, and Keep the door between the plasma reactor and the vacuum chamber in a closed state, hydrogen can enter the vacuum chamber through the gap between the door and the plasma reactor, and when the pressure of the plasma reactor reaches 5mbar, close the The second air inlet, the second air outlet,...

Embodiment 3

[0073] The processing system is a PECVD system. During normal operation, the plasma reactor of the PECVD system is heated, and gas is introduced into the second air inlet of the plasma reactor to keep the temperature at 160 °C, and at the same time, the upper electrode, the RF high frequency is applied to the lower electrode to plasma the gas in the plasma reactor, and the solar cell thin film is produced on the glass substrate by PECVD process.

[0074] When the PECVD system needs to be maintained, stop heating the plasma reactor, apply RF high frequency to the upper electrode and the lower electrode in the plasma reactor, feed hydrogen into the second air inlet of the plasma reactor, and Keep the door between the plasma reactor and the vacuum chamber closed, hydrogen can enter the vacuum chamber through the gap between the door and the plasma reactor, and when the pressure of the plasma reactor reaches 6mbar, close the The pressure of the second air inlet, the second air ou...

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Abstract

The invention provides a cooling method for a treating system. The treating system comprises a vacuum chamber and a plasma reactor located in the vacuum chamber and used for treating a substrate at a first temperature. The cooling method comprises the following steps: opening a second gas inlet, introducing heat conduction gas into the second gas inlet and allowing the plasma reactor and the vacuum chamber to be filled with the heat conduction gas and pressures in the plasma reactor and the vacuum chamber to reach preset values; and maintaining the pressures in the plasma reactor and the vacuum chamber until the temperature of the plasma reactor rises to a second temperature. According to the invention, cooling time of the plasma reactor is greatly shortened, utilization and production power of equipment of the treating system are improved, the process of cooling is smooth and steady, and components in the plasma reactor are protected from damage; moreover, after the heat conduction gas is introduced into the plasma reactor for a period of time, pressure in the vacuum chamber and the plasma reactor are maintained, so cooling time is shortened.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, in particular to a cooling method for a processing system. Background technique [0002] PECVD (Plasma Enhanced Chemical Vapor Deposition) is the abbreviation of Plasma Enhanced Chemical Vapor Deposition. It is a deposition technology that generates active groups through the plasma discharge of reactive gases to promote the formation of thin films. It can significantly reduce the chemical vapor deposition (CVD) reaction. The temperature allows some CVD coating reactions that originally need to be carried out under high temperature conditions to be carried out at lower temperatures. The main advantage of PECVD is that it is suitable for preparing large-area thin films under low temperature conditions, and can produce high-quality semiconductor thin films or dielectric thin films. Therefore, it has been widely used in thin-film solar cells and flat panel displays in recent years. [0003...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/52C23C16/44
Inventor 郭雷
Owner 理想万里晖真空装备(泰兴)有限公司
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