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A low-temperature printing process of silicon titanium oxide

A titanium silicon and process technology, applied in the field of LCD, can solve the problems of complex titanium silicon process, low production efficiency and high production cost, and achieve the effects of high production efficiency, favorable curing and lower production cost.

Inactive Publication Date: 2016-05-11
江苏华东文化科技融资租赁有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] Due to the complex process of printing silicon titanium oxide in the above steps under high temperature conditions, when producing COG products in large quantities, it will lead to low production efficiency and high production costs

Method used

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Comparison scheme
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Embodiment Construction

[0020] A process for low-temperature printing silicon titanium oxide provided by an embodiment of the present invention includes the following steps:

[0021] (1) cleaning ITO glass;

[0022] (2) Print silicon titanium oxide on the steps of the terminals on the ITO glass;

[0023] (3) Print polyimide on the surface of ITO;

[0024] (4) Pre-baking silicon titanium oxide and polyimide at a temperature of 80° C. to volatilize the volatile active agent in the diluent;

[0025] (5) curing silicon titanium oxide and polyimide at a temperature of 260°C.

[0026] Since the process of the present invention firstly prints silicon titanium oxide on the step line of the terminal on the ITO glass, then prints polyimide on the surface of the ITO, and finally pre-baking together, after the pre-baking, the temperature is 260 ° C Curing, compared with the existing process, there is one less cleaning process, one pre-baking process and one curing process. Therefore, the process of the presen...

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Abstract

The invention provides a low temperature process for printing titanizing silicon. The low temperature process for printing the titanizing silicon comprises firstly printing the titanizing silicon on a routing of a step of a terminal of ITO (Indium Tin Oxide) glass; then printing polyimide on the surface of the ITO; finally performing preliminary drying together and performing solidification under a condition with the temperature of 260 DEG C. Compared with the existing process, a cleaning process, a preliminary drying process and a solidification process are reduced, so that the low temperature process for printing the titanizing silicon has the advantages of being simple and high in production efficiency and accordingly reducing the production costs when COG products are produced in a large scale, being low in operative temperature and beneficial to solidification of the titanizing silicon and the polyimide and reducing the power consumption due to the fact that the titanizing silicon and the polyimide are solidified under the condition with the temperature of 260 DEG C.

Description

technical field [0001] The invention belongs to the technical field of LCDs, and relates to a process for printing silicon titanium oxide at low temperature. Background technique [0002] At present, for COG products (that is, module products in which chips are directly bonded on glass), in order to prevent corrosion of the traces on the steps of the terminals of COG products, silicon titanium oxide is generally printed on the traces of the steps of the terminals. Titanium silicon is pre-baked and cured at high temperature, and then polyimide is printed on the surface of titanium silicon, then pre-baked and cured at high temperature, so as to protect the wiring on the terminal. This process includes the following printing steps: [0003] 1. Clean ITO glass; [0004] 2. Print silicon titanium oxide on the trace of the step of the terminal; [0005] 3. Pre-baking silicon titanium oxide at a temperature of 80°C; [0006] 4. Solidify silicon titanium oxide at a temperature of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/13
Inventor 范燕辉文开福
Owner 江苏华东文化科技融资租赁有限公司