Method for isolating films on two sides of substrate layer and preparing process for heterogenous junction solar cell

Abstract

The invention discloses a method for isolating films on the two sides of a substrate layer. The method comprises the following steps of 1, photoetching photoresist narrow lines at the periphery of the front side and / or the back side of the substrate layer and at the portion close to the edge of the substrate layer, 2, respectively and correspondingly producing film layers on the front side and the back side of a substrate, 3, using organic solvent to remove the photoresist narrow lines in the step 1 before the work procedure for forming a silver grid electrode of the solar cell, and 4, using low-temperature silver paste silk screen to print the silver grid electrode and drying the low-temperature silver paste to enable the organic solvent used in the step 3 to be volatized. The method can effectively avoid the phenomenon of cell electric leakage or cell short circuit caused by electrical connection between the films on the two sides of the substrate layer. Furthermore, the method can avoid damage of laser isolation methods, mechanical isolation methods and the like to the cell and guarantee that the efficiency of the cell is not affected.

Description

technical field [0001] The invention relates to a method for isolating thin films on both sides of a substrate layer and a preparation process for heterojunction solar cells, belonging to the technical field of thin film solar cells. Background technique [0002] At present, heterojunction solar cells have attracted more and more attention due to their high efficiency, relatively simple preparation process, and small temperature coefficient. The more typical one is the HIT battery of Sanyo, Japan, and its latest report shows that it is 100cm 2 The highest efficiency on the cell of the area is 24%. However, in the process of preparing the battery, since the growing films are deposited on the surface of the silicon wafer, they will also be deposited on the edge of the silicon wafer, so the films on both sides of the silicon wafer will contact, resulting in battery leakage or short circuit. (leakage for amorphous silicon film, short circuit for transparent conductive film), a...

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Problems solved by technology

However, in the process of preparing the battery, since the growing films are deposited on the surface of the silicon wafer, they will also be deposited on the edge of the silicon wafer, which will cause the films on both sides of the silicon wafer to contact, resulting in battery leakage or short circuit. (leakage for amorphous silicon film, short circuit for transparent conductive film), among which leakage is the most important, so it is necessary to cut the edge mechanically or laser to form isolation after the entire battery is prepared. This will cause damage to the battery, thereby affecting the efficiency of the battery

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