MOCVD reactor and support shaft for MOCVD reactor

A technology for supporting shafts and reactors, applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve the problems of prolonging normal working hours, large thermal conductivity, large heat transfer, etc., and achieve easy and uniform thermal field , Calorie reduction, easy to form effect

Active Publication Date: 2013-12-11
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to overcome the shortcomings of the existing support shaft with high thermal conductivity and large heat transfer from the carrier plate to the support shaft, resulting in low power utilization of the inner ring heater, high surface load for inner ring heating, and high cooling requirements under the suppo

Method used

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  • MOCVD reactor and support shaft for MOCVD reactor
  • MOCVD reactor and support shaft for MOCVD reactor
  • MOCVD reactor and support shaft for MOCVD reactor

Examples

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Embodiment Construction

[0065] image 3 Shown is a schematic diagram of an implementation example of the present invention, Figure 4 for image 3 A partial enlargement of the . combine image 3 and Figure 4 It can be seen that the rotating support shaft 6 of the wafer carrier mainly includes a bottom portion 601 of the rotating supporting shaft, a top portion 605 of the rotating supporting shaft, a heat insulating sleeve 606 , and a reinforcing sleeve 603 . The components of the above-mentioned rotating support shaft are fastened together by screws 602 to form a whole. In order to enhance the heat insulation effect, a heat insulation pad 610 and a gasket 609 for protecting the heat insulation pad are distributed under the screw head or the bolt head 604, and a heat insulation cover 604 is distributed above the screw head or the bolt head. The wafer carrier 9 is coupled to the top 605 of the rotating support shaft 6 , and the wafer carrier 9 mainly includes a connecting ring 901 , a fixed cover...

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Abstract

The invention discloses an MOCVD (metal organic chemical vapor deposition) reactor and a support shaft for the MOCVD reactor. The problems that an inner ring heater is low in power utilization ratio, a load of the surface of the inner ring heater is high, and a cooling requirement below the support shaft is high due to the fact that the available support shaft is large in heat conductivity coefficient, and the heat transmission capacity of a slide glass disk to the support shaft is great are solved. The support shaft for the MOCVD reactor comprises a support shaft bottom, a support shaft middle and a support shaft top, wherein the support shaft top, the support shaft middle and the support shaft bottom are fixedly connected; gas channels are communicated among the support shaft bottom, the support shaft middle and the support shaft top; the support shaft top is frustum-shaped, and is provided with a connecting ring; a fixed cover plate is mounted at the top of the connecting ring; and a heat insulation cover plate is mounted at the top of the fixed cover plate. According to the MOCVD reactor and the support shaft, the service life of the inner ring heater is prolonged; the normal working time of equipment is prolonged; the complete power is reduced; and an energy-saving effect is improved.

Description

technical field [0001] The invention relates to a support shaft for an MOCVD reactor and the MOCVD reactor, in particular to a rotating support shaft and a wafer carrier for a metal organic chemical vapor deposition reactor. Background technique [0002] MOCVD (Metal Organic Chemical Vapor Deposition) equipment, that is, metal organic chemical vapor deposition equipment, which makes the metal organic source (MO source) containing group II or group III elements and the gas source containing group VI or group V elements under strict control React on the wafer under the conditions, and grow to obtain the required thin film material. [0003] The temperature field is one of the key parameters that need to be controlled in MOCVD, because the cracking efficiency of each material that participates in the reaction is different at different temperatures, and because the film formation reaction of MOCVD is very fast under high temperature conditions, the wafers on the carrier tray Di...

Claims

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Application Information

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IPC IPC(8): C23C16/458
CPCC23C16/4584H01L21/68792
Inventor 魏唯罗才旺陈特超
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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