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Plasma reinforcement cleaning device and system and method for cleaning wafers

A plasma and cleaning device technology, applied in cleaning methods and utensils, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve problems such as adverse effects and low efficiency of low-K dielectric layers, and reduce risks and edges. The effect of the effect, the effect of avoiding destruction

Inactive Publication Date: 2013-12-18
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to provide a plasma-enhanced cleaning device and a method for cleaning wafers to solve the problems of low efficiency and adverse effects on low-K dielectric layers in the prior art when plasma-enhanced cleaning is used

Method used

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  • Plasma reinforcement cleaning device and system and method for cleaning wafers
  • Plasma reinforcement cleaning device and system and method for cleaning wafers
  • Plasma reinforcement cleaning device and system and method for cleaning wafers

Examples

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Embodiment 1

[0048] Please refer to figure 2 , a plasma-enhanced cleaning device for cleaning particles and fluorine residues on a wafer, comprising:

[0049] A peripheral pipeline 1 is used to transport cleaned substances; a plasma pipeline 2 is used as a channel for inputting plasma during cleaning; a metal strand layer 3 is used to generate a confinement magnetic field to improve the cleaning efficiency of plasma . Wherein, the peripheral pipeline 1 surrounds the plasma pipeline 2; the diameter of the peripheral pipeline 1 and the diameter of the plasma pipeline are smaller than the diameter of the wafer to be processed, and the metal strand layer 3 is located between the peripheral pipeline 1 and the plasma pipeline. Between the plasma tubes 2. The plasma pipe 2 can be connected with a plasma input pipe (not shown), and the peripheral pipe 1 can be connected with an output pipe or discharge port (not shown), and its specific shape and size can be determined according to the The waf...

Embodiment 2

[0062] Please refer to Figure 5 The present invention provides a plasma-enhanced cleaning system, comprising: the above-mentioned plasma-enhanced cleaning device 5 , a reaction chamber 11 , and a plasma generator 10 . Wherein, the ion enhanced cleaning device 5 is located inside the reaction chamber 11; the reaction chamber 11 has an internal interface, an external interface and an outlet; the output end 12 of the ion generator 10 is connected to the reaction chamber The external interface of the chamber 11 is connected, and the plasma pipeline 2 is connected with the internal interface of the reaction chamber through a pipeline 13, which is used to receive the plasma provided by the output end 12 of the ion generator 10. The peripheral pipeline 1 It communicates with the discharge port of the reaction chamber 11 through another pipeline 14 for discharging the cleaned substances.

[0063] In the plasma enhanced cleaning system described in this embodiment, the number of the ...

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Abstract

The invention discloses a plasma reinforcement cleaning device and system and a method for cleaning wafers. When the plasma reinforcement cleaning device with the diameter smaller than that of the wafers is utilized to clean the wafers, especially cleaning fluorine residue, heat can be quickly radiated. Furthermore, small-area cleaning can guarantee that the impurities in cleaned areas can be removed clearly, wet method cleaning is avoided, the cleaned particles and the fluorine residues can be exhausted by peripheral pipelines timely, the cleaning quality is greatly improved, the effects of the fringe effect are reduced, the damage to a low K medium layer is avoided in cleaning, and risks in cleaning are greatly reduced.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a plasma enhanced cleaning device and a method for cleaning wafers. Background technique [0002] In the semiconductor manufacturing process, it is inevitable that a large number of particles will be generated, usually these particles will be discharged by the downflow in the equipment, but there will still be some particles adsorbed on the surface of the wafer , these particles usually need to be removed. [0003] On the other hand, during the process, it is necessary to come into contact with some fluorine-containing substances, and the fluorine ions generated after ionization of the fluorine-containing substances will combine with the gaseous substances and be adsorbed on the wafer, forming fluorine-containing residues. These substances must be removed before the subsequent manufacturing process, otherwise it will affect the quality of the product. [0004] Wi...

Claims

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Application Information

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IPC IPC(8): H01L21/67H01L21/02B08B7/00
Inventor 张城龙王冬江张海洋
Owner SEMICON MFG INT (SHANGHAI) CORP