Wide-band low noise amplifier and amplifying method using it

A low-noise amplifier, broadband low-noise technology, applied in the field of broadband low-noise amplifiers and broadband low-noise amplification, can solve problems such as disregarding structural features, second harmonics, NF difference, etc.

Inactive Publication Date: 2013-12-18
SAMSUNG ELECTRO MECHANICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, as mentioned above, the NF is poor since structural features and second harmonics are not considered

Method used

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  • Wide-band low noise amplifier and amplifying method using it
  • Wide-band low noise amplifier and amplifying method using it
  • Wide-band low noise amplifier and amplifying method using it

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Embodiment Construction

[0045] Exemplary embodiments of the present invention for achieving the above objects will be described with reference to the accompanying drawings. In this specification, the same reference numerals will be used to describe the same components, and their detailed descriptions will be omitted to allow those skilled in the art to easily understand the present invention.

[0046] In this specification, it will be understood that a component may be "directly connected to", "directly coupled to", unless a term such as "directly" is used for connection, coupling, or a configuration relationship between one component and another component. to" or "directly provided to" another element, or may be connected to, coupled to, or provided to another element with intervening other elements therebetween.

[0047] Although a singular form is used in this specification, it may also include a plural form as long as it is not contrary to the concept of the present invention and is not contradic...

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Abstract

The invention discloses a wide-band low noise amplifier and an amplifying method using it. The wide-band low noise amplifier comprises a first LNA which receives a single RF signal to amplify the RF signal to increase NF, a second LNA which receives the output of the first LNA to be used as a first input and which includes a second input side connected to the ground through a first capacitor and which operates during a high-gain mode to conduct high-gain amplifying during the operation of the high-gain mode and to output a first differential signal, an attenuation unit which receives, attenuates and outputs the output of the first LNA, and a third LNA which operates during a low-gain mode and receives the output of the attenuation unit as a third output and receives a single RF signal through a second capacitor to as a fourth input to conduct low-gain differential amplifying and to output a second differential signal.

Description

[0001] Cross References to Related Applications [0002] This application claims Korean Patent Application No. 10-2012-0058291 filed on May 31, 2012, entitled "Wideband Low Noise Amplifier and Wideband Low Noise Amplifying Method" interests, the entire contents of which are hereby incorporated into this application by reference. technical field [0003] The present invention relates to a broadband low noise amplifier and a broadband low noise amplification method, more particularly, to a broadband low noise amplifier with improved IIP2 linearity and a broadband low noise amplification method. Background technique [0004] Progress has been made to enable a single wireless communication chip to be used in various applications (e.g., Digital Multimedia Broadcasting (DMB), Global Positioning System (GPS), Global System for Mobile Communications (GSM), Wideband Code Division Multiple Access (WCDMA), etc. ) efforts. These applications have their frequency bands and specificatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/26H03F1/42
CPCH03F1/223H03F1/26H03F1/42H03F3/45179H03F3/68H03F2200/294H03F2200/372H03G1/0023
Inventor 黄铉奭罗裕森金奎锡刘显焕金裕桓
Owner SAMSUNG ELECTRO MECHANICS CO LTD
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