Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Millimeter wave amplifier unilateralization network using on-chip transformer with random coupling coefficient

An on-chip transformer and coupling coefficient technology, applied in the direction of amplifiers with distributed constants in the coupling network, can solve problems such as transformer difficulties, reduce transformer self-resonant frequency, etc., and achieve the effect of improving reverse isolation

Active Publication Date: 2013-12-18
SOUTHEAST UNIV
View PDF2 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the millimeter-wave frequency band, it is difficult to realize a strongly coupled on-chip transformer with a coupling coefficient close to 1, because increasing the coupling between the primary and secondary coils of the transformer often introduces more parasitic capacitance into the transformer, thereby reducing the self-resonant frequency of the transformer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Millimeter wave amplifier unilateralization network using on-chip transformer with random coupling coefficient
  • Millimeter wave amplifier unilateralization network using on-chip transformer with random coupling coefficient
  • Millimeter wave amplifier unilateralization network using on-chip transformer with random coupling coefficient

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The present invention will be further explained below in conjunction with the accompanying drawings.

[0021] Such as figure 1 As shown, the basic structure of the present invention is a millimeter-wave amplifier unidirectional network using an on-chip transformer, which includes a common-source structure amplifier 1 and an on-chip helical transformer 2 . The on-chip helical transformer 2 is connected between the gate and drain of the common source amplifier 1 . Wherein, the drain voltage is induced by the secondary coil 22 of the transformer, coupled to the primary coil 21 through the transformer, and then fed back to the gate in the form of current, forming a voltage-current negative feedback structure.

[0022] figure 2 It is a schematic circuit diagram of applying the present invention in a Q-band millimeter-wave common-source amplifier. As shown in the figure, the first stage 3 of the amplifier adopts the structure of source inductive negative feedback; the sec...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a millimeter wave amplifier unilateralization network using an on-chip transformer with a random coupling coefficient. The network comprises a common source structure amplifier (1) and the on-chip spiral transformer (2). A primary coil (21) and a secondary coil (22) of the transformer (2) are respectively connected to a grid electrode and a drain electrode of the common source structure amplifier (1), voltage-current feedback is introduced, specific unilateralization conditions are met by regulating a self-inductance value of the secondary coil and a grid-drain stray capacitance of a transistor is offset by resonance, so that reverse isolation of the common source amplifier is greatly improved and the defects of high requirement on the coupling coefficient of the transformer and poor reverse isolation of a conventional millimeter wave common source amplifier are overcome.

Description

technical field [0001] The invention relates to a unidirectional network of a millimeter wave amplifier, specifically a circuit network structure manufactured by semiconductor integrated circuit technology and using an on-chip spiral transformer to improve the reverse isolation of a millimeter wave common source amplifier. Background technique [0002] The parasitic capacitance inside the transistor, especially the parasitic capacitance between the gate and the drain, will introduce a parasitic reverse signal coupling path inside the tube. This internal feedback path often brings disadvantages to the design of millimeter wave amplifiers. Impact. For example, when designing a multi-stage common source amplifier, the input impedance will be affected when adjusting the output matching network of each stage amplifier, and the input matching network needs to be redesigned; after the input matching network is designed, the output impedance of the transistor will change again , wh...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/60
Inventor 陈继新梁文丰洪伟
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products