Single event transient pulse resisting CMOS circuit

A transient pulse, anti-single particle technology, applied in pulse technology, logic circuits, electrical components, etc., can solve problems such as large hardware consumption, and achieve the effect of less MOS tubes, low power consumption, and widening the width range.

Active Publication Date: 2013-12-25
北京中科微投资管理有限责任公司
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

This method also needs to implement two stages of phase delay, as well as three latches and adjudication circuits, which consumes a lot of hardware

Method used

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  • Single event transient pulse resisting CMOS circuit
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  • Single event transient pulse resisting CMOS circuit

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Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0031] The present invention provides an anti-single-event transient pulse CMOS circuit, comprising: a first buffer for eliminating "low high low" type pulses, the input end of which is connected to the input signal input;

[0032] A first transmission gate with a positive voltage gate control and a negative voltage gate control, the data input terminal of which is connected to the output signal out1 of the first buffer;

[0033] The second buffer is used to eliminate "high, low and high" type pulses, and its input terminal is connected to the input signal input;

[0034] A second transmission gate with positive voltage gate control and negative voltage gate control, the data input terminal of which is connected to the ou...

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Abstract

The invention provides a single event transient pulse resisting CMOS circuit which comprises a first buffer and a second buffer. The input end of the first buffer is connected with the input signal of the first buffer, and the output signal of the first buffer is connected with the data input end of a first transmission door. The input end of the second buffer is connected with the input signal of the second buffer, and the output signal of the second buffer is connected with the data input end of a second transmission door. The data output signal of the first transmission door is connected with the data output end of the second transmission door and the input end of a first phase inverter. The output signal of the first phase inverter is connected with the input end of a second phase inverter, the grid electrode of an NMOS tube in the first transmission door and the grid electrode of a PMOS tube in the second transmission door. The output signal of the second phase inverter is connected with the grid electrode of a PMOS tube in the first transmission door and the grid electrode of an NMOS tube in the second transmission door and is used as the output signal of the single event transient pulse resisting CMOS circuit. According to the single event transient pulse resisting CMOS circuit, the buffers with different pull-up/pull-down capacities are used for filtering two classes of single particle pulses, the corresponding signals are output by controlling the transmission doors, and the single event transient pulse resisting CMOS circuit has the advantages of having few MOS tubes, being strong in single event transient pulse resisting capacity and good in filtering effect and the like.

Description

technical field [0001] The invention relates to the technical field of anti-radiation hardened circuits, in particular, the invention relates to an anti-single-event transient pulse CMOS circuit. Background technique [0002] Aerospace technology is an important symbol to measure a country's modernization level and comprehensive national strength. Integrated circuits are the core of spacecraft, and their performance and functions have become one of the main indicators for measuring the performance of various spacecraft. In order to meet the current and future challenges of aerospace technology development, countries are actively developing integrated circuits with high performance and high radiation resistance. In recent years, my country's aerospace industry has developed rapidly, and major aerospace applications such as manned spaceflight projects, lunar exploration projects, "Beidou" navigation and positioning systems, and "Tiangong" have put forward urgent needs for radi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/0948
Inventor 宿晓慧毕津顺罗家俊韩郑生郝乐
Owner 北京中科微投资管理有限责任公司
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