The invention provides a single event transient pulse resisting
CMOS circuit which comprises a first buffer and a second buffer. The input end of the first buffer is connected with the input
signal of the first buffer, and the output
signal of the first buffer is connected with the
data input end of a first transmission door. The input end of the second buffer is connected with the input
signal of the second buffer, and the output signal of the second buffer is connected with the
data input end of a second transmission door. The data output signal of the first transmission door is connected with the data output end of the second transmission door and the input end of a first phase
inverter. The output signal of the first phase
inverter is connected with the input end of a second phase
inverter, the grid
electrode of an NMOS tube in the first transmission door and the grid
electrode of a PMOS tube in the second transmission door. The output signal of the second phase inverter is connected with the grid
electrode of a PMOS tube in the first transmission door and the grid electrode of an NMOS tube in the second transmission door and is used as the output signal of the single event transient pulse resisting
CMOS circuit. According to the single event transient pulse resisting
CMOS circuit, the buffers with different pull-up / pull-down capacities are used for filtering two classes of single particle pulses, the corresponding signals are output by controlling the transmission
doors, and the single event transient pulse resisting CMOS circuit has the advantages of having few MOS tubes, being strong in single event transient pulse resisting capacity and good in filtering effect and the like.