GaN-based HEMT device and manufacturing method thereof

Abstract

The invention discloses a GaN-based HEMT device and a manufacturing method of the GaN-based HEMT device. A substrate, a GaN buffer layer and a potential barrier layer are arranged in the device from bottom to top, a first passivation layer is arranged on the potential barrier layer and comprises a left half passivation layer and a right half passivation layer which are located between a source electrode and a grid electrode and between the grid electrode and a drain electrode respectively; a second passivation layer is arranged on the first passivation layer; the first passivation layer is a passivation layer increasing the tensile stress of the potential barrier layer and the second passivation layer is a passivation layer increasing the pressure stress of the potential barrier layer. The manufacturing method comprises the steps that an epitaxial structure grows, so that the substrate, the GaN buffer layer and the potential barrier layer are formed; passivation layer deposition is conducted on the potential barrier layer; the passivation layer below the grid electrode is etched so that the first passivation layer comprising the left half passivation layer and the right half passivation layer can be formed; second passivation layer deposition is conducted on the first passivation layer; the grid electrode is defined and deposited. According to the GaN-based HEMT device and the manufacturing method of the GaN-based HEMT device, the double-passivation-layer technology is adopted, the concentration of two-dimensional electron gas of a GaN buffering layer zone below the grid electrode is firstly increased and then exhausted, and therefore the two-dimensional electron gas is prevented from existing in the GaN buffering layer below the grid electrode before grid voltage bias.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a GaN-based HEMT device and a manufacturing method thereof. Background technique [0002] GaN-based HEMT (High Electron Mobility Transistor high electron mobility transistor) device is a semiconductor electronic device used in microwave radio frequency devices, in which GaN is a third-generation wide bandgap semiconductor material with a large bandgap (3.4eV), High breakdown voltage (3.3MV / cm), high saturation electron velocity and other excellent properties enable GaN-based HEMT devices to meet the system's high-frequency, high-efficiency, and high-power requirements, and have great application prospects in microwave radio frequency devices. [0003] Current GaN-based HEMT devices are basically depletion type, that is, their threshold voltage is negative. The epitaxial structure of a depletion-mode GaN-based HEMT device consists of substrate, GaN buffer layer, and barrier l...

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problems of complex design, high cost, and low reliability of the prior art system, an embodiment of the present invention provides a GaN-based HEMT device and its manufacturing method

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