GaN-based HEMT device and manufacturing method thereof
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A manufacturing method and device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as low reliability, complex system design, and high cost, and achieve stability, cost reduction, and simplified structure Effect
Inactive Publication Date: 2014-01-01
HUAWEI TECH CO LTD
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[0006] In order to solve the problems of complex design, high cost, and low reliability of the prior art system, an embodiment of the present invention provides a GaN-based HEMT device and its manufacturing method
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Embodiment 1
[0043] Such as figure 1 As shown, a GaN-based HEMT device provided by an embodiment of the present invention includes: a substrate 1, a GaN buffer layer 2, a barrier layer 3, a first passivation layer 7, and a second passivation layer 8. The gate 5, the source 6 and the drain 4, the substrate 1, the GaN buffer layer 2 and the barrier layer 3 are arranged sequentially from bottom to top;
[0044] The first passivation layer 7 is disposed on the barrier layer 3, the first passivation layer 7 includes a left semi-passivation layer 71 and a right semi-passivation layer 72, the left semi-passivation layer 71 is located Between the source 6 and the gate 5, the right semi-passivation layer 72 is located between the gate 5 and the drain 4;
[0045] The second passivation layer 8 is arranged on the first passivation layer 7, the two sides of the second passivation layer 8 are arranged on the first passivation layer 7, and the middle of the second passivation layer 8 Part of it is arr...
Embodiment 2
[0057] Such as figure 2 As shown, a GaN-based HEMT device fabrication method provided by an embodiment of the present invention, the fabrication method specifically includes:
[0058] S101, growing the epitaxial structure to form a substrate, a GaN buffer layer, and a barrier layer; at the same time, completing device isolation etching and ohmic contact metal deposition.
[0059] S102, depositing a passivation layer on the barrier layer; that is, depositing a first passivation layer on the barrier layer of the epitaxial structure; depositing the first passivation layer, so that the first passivation The barrier layer under the action of the GaN layer is subjected to greater tensile stress, and the surface potential of the barrier layer changes, resulting in an increase in the two-dimensional electron gas density of the GaN buffer layer. Due to the material characteristics of GaN-based materials, there are many dangling bonds on the surface, forming defect energy levels and a...
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Abstract
The invention discloses a GaN-based HEMT device and a manufacturing method of the GaN-based HEMT device. A substrate, a GaN buffer layer and a potential barrier layer are arranged in the device from bottom to top, a first passivation layer is arranged on the potential barrier layer and comprises a left half passivation layer and a right half passivation layer which are located between a source electrode and a grid electrode and between the grid electrode and a drain electrode respectively; a second passivation layer is arranged on the first passivation layer; the first passivation layer is a passivation layer increasing the tensile stress of the potential barrier layer and the second passivation layer is a passivation layer increasing the pressure stress of the potential barrier layer. The manufacturing method comprises the steps that an epitaxial structure grows, so that the substrate, the GaN buffer layer and the potential barrier layer are formed; passivation layer deposition is conducted on the potential barrier layer; the passivation layer below the grid electrode is etched so that the first passivation layer comprising the left half passivation layer and the right half passivation layer can be formed; second passivation layer deposition is conducted on the first passivation layer; the grid electrode is defined and deposited. According to the GaN-based HEMT device and the manufacturing method of the GaN-based HEMT device, the double-passivation-layer technology is adopted, the concentration of two-dimensional electron gas of a GaN buffering layer zone below the grid electrode is firstly increased and then exhausted, and therefore the two-dimensional electron gas is prevented from existing in the GaN buffering layer below the grid electrode before grid voltage bias.
Description
technical field [0001] The invention relates to the field of semiconductor devices, in particular to a GaN-based HEMT device and a manufacturing method thereof. Background technique [0002] GaN-based HEMT (High Electron Mobility Transistor high electron mobility transistor) device is a semiconductor electronic device used in microwave radio frequency devices, in which GaN is a third-generation wide bandgap semiconductor material with a large bandgap (3.4eV), High breakdown voltage (3.3MV / cm), high saturation electron velocity and other excellent properties enable GaN-based HEMT devices to meet the system's high-frequency, high-efficiency, and high-power requirements, and have great application prospects in microwave radio frequency devices. [0003] Current GaN-based HEMT devices are basically depletion type, that is, their threshold voltage is negative. The epitaxial structure of a depletion-mode GaN-based HEMT device consists of substrate, GaN buffer layer, and barrier l...
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