Processing method and processing apparatus

Abstract

The invention provides a processing method and a processing apparatus. An area to be processed can be easily controlled. The processing apparatus performs etch processing on an object to be processed. While etching gas is supplied into an etching chamber in which a workpiece held on a holding face of a holding table is accommodated, a laser beam of a wavelength having a transparency through the holding table and the workpiece is irradiated upon the workpiece from the opposite side to the holding face of the holding table such that the focal point of the laser beam is positioned in the inside of a processing region of the workpiece to excite the processing region to induce etching.

Description

technical field [0001] The present invention relates to a processing method and a processing device for etching a workpiece. Background technique [0002] In the manufacturing process of semiconductor devices, a plurality of regions are divided on the surface of a roughly disc-shaped semiconductor wafer by dividing lines called partition lines arranged in a grid pattern, and ICs (integrated circuits), LSIs, etc. are formed in the divided regions. (Large-Scale Integrated Circuits) and other devices. And, the individual devices are manufactured by dividing the region where the devices are formed by cutting the semiconductor wafer along the lanes. In addition, optical device wafers in which gallium nitride compound semiconductors and the like are stacked on the surface of a sapphire substrate or a silicon carbide substrate are also divided into individual optical devices such as light-emitting diodes and laser diodes by cutting along the lanes, and are widely used. on electri...

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Problems solved by technology

When such a cutting tool is used to cut the wafer along the lanes and divide it into individual devices, there is a problem that cracks are generated on the surface and back of the device to reduce the bending strength of the device.

[0005] However, when irradiating pulsed laser light with a wavelength that is absorbing to the wafer along the intervals of the wafer, a new problem arises: thermal energy is concentrated in the irradiated area to generate debris, and the debris adheres to the surface of the device. degrade the quality of the device

[0007] However, there is a problem that since the reformed layer remains on the side surfaces of the individual devices divided by the division method described in Patent Document 2, the bending strength of the device is reduced and the quality of the device is lowered.

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