Cleaning method used in amorphous carbon deposition process

A deposition process, amorphous carbon technology, applied in cleaning methods and utensils, chemical instruments and methods, metal material coating processes, etc. Coefficient of friction, effect of avoiding vane problems

Active Publication Date: 2014-01-22
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] To sum up, the above two existing technologies have aluminum contamination on

Method used

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  • Cleaning method used in amorphous carbon deposition process
  • Cleaning method used in amorphous carbon deposition process
  • Cleaning method used in amorphous carbon deposition process

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[0034] Attached below Figure 4 with 5 The specific implementation of the present invention will be further described in detail.

[0035] See Figure 4 , Figure 4 It is a schematic flow diagram of the cleaning process method in the amorphous carbon film deposition process of the present invention. Such as Figure 4 As shown, the cleaning method used in the amorphous carbon deposition process in the embodiment of the present invention includes a pre-cleaning process step S1 of the plasma cavity and a process step S2 of depositing an environmental protection film on the plasma cavity under plasma conditions.

[0036] It should be noted that in the pre-cleaning process step S1 of the plasma cavity under the plasma condition, the pre-cleaning process method in the PECVD amorphous carbon film deposition process can be used with the prior art. The cleaning method used in the amorphous carbon deposition process provided by the present invention is to improve the process step S2 of deposi...

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Abstract

The invention relates to a cleaning method used in an amorphous carbon deposition process. The cleaning method comprises a process step S1 of pre-cleaning a plasma chamber body under a plasma condition and a process step S2 of depositing an environment protecting film on the plasma chamber body; the step S2 particularly comprises the steps of introducing gas containing C2H2, Ar and He into the plasma chamber body, depositing a layer of non-N-doped amorphous carbon film having a first thickness on the plasma chamber body wall, then introducing gas containing C2H2 and N2 into the plasma chamber body, again growing a layer of N-doped amorphous carbon film having a second thickness on the non-N-doped amorphous carbon film, wherein the second thickness is less than the first thickness. Therefore, the problems of wafer backside aluminum pollution and caused easy migration of a wafer position are avoided.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, and more specifically relates to a cleaning method using plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, referred to as PECVD) in an amorphous carbon film deposition process. Background technique [0002] Usually, before using chemical vapor deposition equipment to deposit thin films on silicon wafers, the cavity needs to be pre-cleaned to remove the deposited film accumulated in the cavity and the particles suspended in the cavity. In the cleaning process, first of all, it is necessary to pass cleaning gas into the cavity, such as NF 3 . Gas NF 3 In the plasma environment, fluorine ions are ionized and react with the chamber wall and the deposited film on the heater (Heater) to generate fluorine-containing gas, which is pumped away to clean the chamber. [0003] For deposition machines including amorphous carbon film (APF for shor...

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Application Information

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IPC IPC(8): C23C16/26C23C16/30B08B9/08
Inventor 雷通桑宁波贺忻
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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