Method of manufacturing gallium nitride substrate and gallium nitride substrate manufactured by the same

Abstract

A method of manufacturing a gallium nitride (GaN) substrate and a GaN substrate manufactured by the same. The method includes the steps of growing a GaN film on a base substrate and separating the base substrate from the GaN film. The step of growing the GaN film includes forming pits in the GaN film, the pits inducing an inversion domain boundary to be formed inside the GaN film. The GaN substrate can have a predetermined thickness with which it can be handled during layer transfer (LT) processing, and the warping of the GaN substrate can be minimized, thereby preventing cracks due to warping.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to Korean Patent Applications Nos. 10-2012-0070389 and 10-2012-0147987 filed on June 29, 2012 and December 18, 2012, the entire contents of which are in all respects The statement is incorporated herein by reference. technical field [0003] The present invention relates to a method of manufacturing a gallium nitride (GaN) substrate and a gallium nitride substrate manufactured by the method, and more particularly, to a method of manufacturing a GaN substrate and a GaN substrate manufactured by the method, wherein the GaN substrate may have The layer transfer (LT) process can be used to manipulate the predetermined thickness of the substrate, and the warpage of the GaN substrate can be minimized, thereby preventing cracks due to warpage. Background technique [0004] Gallium nitride (GaN) is a direct-transition semiconductor material with a bandgap energy of 3.39eV, and can be used to m...

AI Technical Summary

Problems solved by technology

However, when the low-quality GaN film is removed, the thickness of the remaining high-quality GaN film becomes 200 μm or less, and it is difficult to handle the GaN film, which becomes a problem

Images