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A Thermal Field Structure of Polysilicon Ingot Furnace

A technology of polysilicon ingot casting furnace and thermal field, which is applied in the direction of crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of excessive melting of daughter crystals and difficult operation, and achieve the effect of avoiding excessive melting

Active Publication Date: 2017-01-04
LESHAN TOPRAYCELL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] In addition, when using the polysilicon ingot casting device for semi-melting processing, the thermal insulation cage does not need to be closed, and there is a gap between the thermal insulation cover and the lower support thermal insulation board to facilitate heat dissipation, but a layer of sub-crystals needs to be laid on the bottom of the crucible, and When heating and melting the silicon material, the seed crystals need to be kept in a semi-molten state, which requires strict and precise control of the heater to achieve this. It is extremely difficult to operate and it is easy to over-melt the seed crystals

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  • A Thermal Field Structure of Polysilicon Ingot Furnace
  • A Thermal Field Structure of Polysilicon Ingot Furnace
  • A Thermal Field Structure of Polysilicon Ingot Furnace

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Embodiment Construction

[0029] The present invention will be further described below in conjunction with the accompanying drawings.

[0030] Such as Figures 1 to 3 As shown, the thermal field structure of the polysilicon ingot casting furnace includes a furnace body 1, and an air extraction hole 2 is arranged on the furnace body 1, and a lower heat insulation board 3 and a heat preservation cover 4 are arranged in the furnace body 1, and the heat preservation cover 4 is placed on the bottom On the supporting heat preservation board 3, the heat preservation cover 4 and the lower support heat preservation board 3 jointly form a heat preservation and heat insulation cage. The heat preservation cover 4 is connected with a lifting rod 5 that can move the heat preservation cover 4 up and down. There are crucible 6, crucible guard plate 7, graphite base plate 8, graphite cover plate 9, side heater 10, top heater 11, heat exchange platform 12, and described graphite base plate 8 is placed on heat exchange p...

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Abstract

The invention discloses a thermal field structure of a polycrystalline silicon ingot furnace, which can avoid excessive melting of sub-crystals when a semi-melting process is performed. The thermal field structure of the polycrystalline silicon ingot furnace comprises a furnace body, wherein a lower support heat insulation plate and a heat insulation cover are arranged in the furnace body, the heat insulation cover and the lower support heat insulation plate jointly constitute a heat insulation cage, a crucible, a crucible protective plate, a graphite bottom plate, a graphite cover plate, a side heater, a top heater and a heat exchange platform are arranged in the heat insulation cage, a tail gas exhaust hole is formed in the upper end of the crucible protective plate, the thermal field structure further comprises a gas inlet pipe, the crucible protective plate comprises an upper protective plate and a lower protective plate, and the upper protective plate and the lower protective plate are spliced together. As the upper protective plate and the lower protective plate are spliced together, a splicing gap exists between the upper protective plate and the lower protective plate, the heat at the bottom of the crucible can be rapidly dissipated through the splicing gap, the excessive melting of the sub-crystals can be further avoided, and the sub-crystals can be kept in a semi-melted state. The thermal field structure is suitable for popularization and application in the field of polycrystalline silicon production equipment.

Description

technical field [0001] The invention relates to the field of polysilicon production equipment, in particular to a thermal field structure of a polysilicon ingot furnace. Background technique [0002] Solar cells can convert light energy into electrical energy, which is a key point in the development of a modern energy-saving society. According to different substrate materials, existing solar cells are divided into polycrystalline silicon solar cells, monocrystalline silicon solar cells and quasi-monocrystalline silicon solar cells. Among them, the conversion efficiency of monocrystalline silicon solar cells is high, but the production cost is also high. The conversion efficiency of polycrystalline silicon solar cells is 1%-2% lower than that of monocrystalline silicon solar cells, but its production cost is also low. The battery is a battery between a monocrystalline silicon battery and a polycrystalline silicon solar battery. Comprehensive consideration, the current solar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B29/06
Inventor 陈五奎李军马涛徐文州冯加保虎春萍
Owner LESHAN TOPRAYCELL