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Method for temperature stabilization, X-ray detector and CT system

A radiation detector and detector technology, applied in the field of radiation, can solve the problems of semiconductor heating, count rate drift, slow temperature adjustment, etc., and achieve the effect of simplifying the structure, simplifying the cooling scheme, and achieving favorable thermal balance results

Active Publication Date: 2014-02-12
SIEMENS HEALTHCARE GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The following problems arise from this: On the one hand, the employed X-ray flux through the generated photon flux causes heating of the semiconductor and thus a count rate drift
But this has the disadvantage that temperature regulation is sluggish
This also leads to a change in the electric field in the semiconductor and thus to a drift in the count rate

Method used

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  • Method for temperature stabilization, X-ray detector and CT system
  • Method for temperature stabilization, X-ray detector and CT system
  • Method for temperature stabilization, X-ray detector and CT system

Examples

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Embodiment Construction

[0045] figure 1 A CT system C1 is shown as an example. The CT system C1 comprises a gantry housing C6, in which there is a gantry not shown in detail here, on which the first X-ray tube C2 and the oppositely arranged first detector C3 are fixed. superior. Optionally, a second X-ray tube 4 and a second detector C5 oppositely arranged are provided. The patient C7 is located on a patient couch C8 movable in the direction of the system axis C9, with which the patient can be passed continuously or sequentially along the system axis C9 during scanning with X-ray radiation between the X-ray tubes C2 and The measuring field moves between C4 and the respectively associated detectors C3 and C5. The process is carried out via the calculation and control unit C10 with the aid of the computer program Prg 1 to Prg n control.

[0046] Detectors C3 and C5 are constructed according to the invention as direct-conversion X-ray radiation detectors for detecting X-ray radiation according to ...

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PUM

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Abstract

A method is disclosed for the temperature stabilization of a direct-converting X-ray detector, including a detector surface having a semiconductor and being divided into a plurality of partial detector surfaces. During the irradiation of the detector surface, heat is generated in the semiconductor by electric power. Electric power generated in the semiconductor is kept constant for each partial detector surface at least during a heterogeneous and / or temporally variable irradiation of the detector surface by feeding-in power-adjusted additional radiation for each partial detector surface. A direct-converting X-ray detector is disclosed for the detection of X-rays. At least one control loop with at least one reference variable is embodied for the energy regulation of the additional radiation, which keeps the temperature in the semiconductor constant for each partial detector surface by keeping the electric power in the semiconductor constant by changing the energy of the additional radiation. A CT system is disclosed.

Description

technical field [0001] The invention relates to a method for temperature stabilization of a direct conversion X-ray radiation detector having a detector surface with a semiconductor material and divided into a plurality of detectors Detector subsurfaces, wherein heat is generated in the semiconductor material by electrical power when the detector surface is irradiated, and each detector subsurface has at least one additional radiation source which irradiates the semiconductor with additional radiation. [0002] Furthermore, the invention relates to a direct-conversion x-ray radiation detector for detecting x-ray radiation, having at least one detector surface used for detecting x-ray radiation, which detector surface has a semiconductor material and is divided into A plurality of detector subsurfaces, wherein heat is generated in the semiconductor material by electrical power when the detector surface is illuminated, each detector subsurface has at least one additional radiati...

Claims

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Application Information

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IPC IPC(8): G01T1/24G01T7/00
CPCH05G1/30G01T1/244
Inventor P.哈肯施迈德C.施罗特
Owner SIEMENS HEALTHCARE GMBH
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