A circuit board of an igbt module

Abstract

The invention discloses a circuit board of an IGBT module. The IGBT module includes at least two IGBT module subunits, and each of the IGBT module subunits is arranged on the circuit board, wherein the circuit board is an insulating substrate , the insulating substrate is provided with a module emitter lead-out conductive domain, a module collector lead-out conductive domain and a module grid lead-out conductive domain, and each of the IGBT module subunits is provided with a module emitter lead-out conductive domain , The sub-unit emitter lead-out point, the sub-unit collector lead-out point and the sub-unit gate lead-out point connected to the module collector lead-out conductive domain and the module grid lead-out conductive domain are used for the parallel connection between the subunits of each IGBT module; The invention can simply, conveniently, effectively, quickly and accurately realize the parallel connection between the IGBT module subunits and all the chips inside the IGBT module subunits, and at the same time effectively and reliably lead out the electricity.

Description

technical field [0001] The invention belongs to the field of IGBT module manufacturing, and in particular relates to a circuit board of the IGBT module. Background technique [0002] The IGBT module (Insulated Gate Bipolar Transistor, Chinese translation is an insulated gate bipolar transistor) is a device composed of a MOSFET and a bipolar transistor. Its input is a MOSFET and its output is a PNP transistor. It combines the advantages of these two devices. It not only has the advantages of small driving power and fast switching speed of MOSFET devices, but also has the advantages of low saturation voltage and large capacity of bipolar devices. Its frequency characteristics are between MOSFETs and power transistors. , the normal operating frequency range is tens of kHz. In modern power electronics technology, IGBT modules are used more and more widely, and occupy a dominant position in high-frequency and medium-power applications. [0003] Since the current capacity of the...

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Problems solved by technology

[0004] The chips in the existing general IGBT module subunits are all connected in parallel on the DBC substrate with wires. The connection process is relatively complicated, and along the direction of current transmission, there will be a voltage drop due to the lateral distribution of the DBC substrate and the saturation voltage drop of each chip itself. The inconsistency leads to the uneven current flow of the chip, which leads to the technical problem of reducing the reliability of the IGBT module. Further, when multiple IGBT module subunits are connected in parallel, the assembly process of the circuit board is more complicated, and the installation volume of the circuit board Big

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