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Annealing method for raw material of power-integrated-circuit lead frame

An integrated circuit and lead frame technology, which is applied in the annealing field of power integrated circuit lead frame raw materials, can solve the problems of uneven and stable physical and mechanical properties of metal strips, unstable lead frame dimensions, and affecting product service life. Promote the use, easy to operate, prolong the effect of service life

Active Publication Date: 2014-02-26
NINGBO KANGQIANG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Under this method of annealing, the physical and mechanical properties of the metal strip are not uniform and stable enough, and there are performance differences between the outer ring and the inner ring of the same roll of metal strip and between different rolls of metal strip placed in different layers. As a raw material , it is easy to cause dimensional instability and unreliable performance in the process of producing lead frames
It affects the service life of the product, reduces the pass rate, and increases the production cost of the enterprise to a certain extent

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] A method for annealing a raw material of a lead frame for a power integrated circuit, the steps of which are as follows: 1) first place the raw material of a lead frame for a power integrated circuit in an annealing device, heat it, and heat it to a low temperature region within 5 minutes and hours, that is, temperature control At 100°C, after 30-50 minutes of heat preservation, 2) continue heating, and quickly heat up to the high temperature area within 1 hour, that is, the temperature is controlled at 1000°C, and the heat preservation time is 2.5 hours. Lower to the middle temperature area, that is, the temperature is controlled at 500°C, and the temperature drops to room temperature within 2 hours, that is, 15°C. 4) Cool the raw material again through water mist. When the temperature is controlled at 5°C, exit the annealing device, and the whole Nitrogen or inert gas is always used as a protective gas during annealing.

Embodiment 2

[0020] As a further improvement of the present invention, a method for annealing raw materials of power integrated circuit lead frames, the steps of the method are as follows: 1) First, place the raw materials of power integrated circuit lead frames in an annealing device, heat them, and heat them within 10 minutes To the low temperature area, that is, the temperature is controlled at 150°C, and after 50 minutes of heat preservation, 2) continue heating, and the temperature rises rapidly to the high temperature area within 2 hours, that is, the temperature is controlled at 1300°C, and the heat preservation time is 3.5 hours. Cooling down to the medium temperature area within 30 minutes, that is, the temperature is controlled at 600°C, and the temperature is reduced to room temperature within 3 hours, that is, 25°C. 4) Cool the raw materials again through water mist. When the temperature is controlled at 13°C, Exit the annealing device, and use nitrogen or inert gas as the prote...

Embodiment 3

[0022] As a further improvement of the present invention, the steps of the method are as follows: 1) First, put the raw material of the power integrated circuit lead frame in the annealing device, and heat it, and heat it to a low temperature area within 8 minutes, that is, the temperature is controlled at 125°C, and the heat preservation After 40 minutes, 2) continue heating, and rapidly rise to the high temperature area within 1 hour, that is, the temperature is controlled at 1200°C, and the holding time is 3 hours. The temperature is controlled at 550°C, and the temperature drops to room temperature within 2.5 hours, that is, 20°C. 4) Cool the raw material again through water mist. When the temperature is controlled at 10°C, exit the annealing device. During the entire annealing process, nitrogen or Inert gas is used as shielding gas.

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Abstract

The invention relates to an annealing method for a raw material of a power-integrated-circuit lead frame. The method is characterized in that: the method comprises steps of: 1) putting the raw material of the power-integrated-circuit lead frame in an annealing device, heating in 5-10 min h to raise the temperature to a low temperature zone where the temperature is controlled at 100-150 DEG C, and maintaining the temperature for 30-50 min; 2) heating continuously to raise the temperature rapidly in 1-2 h to a high-temperature zone where the temperature is controlled at 1000-1300 DEG C; and maintaining the temperature for 2.5-3.5 h; 3) after the high-temperature maintaining process is finished, cooling rapidly to decrease the temperature in 20-30 min to an intermediate-temperature zone where the temperature is controlled at 500-600 DEG C, and cooling the temperature to room temperature, namely 15-25 DEG C, in 2-3 h; and 4) cooling the raw material again with water mist, and taking the raw material out of the annealing device when the temperature is controlled to be 5-13 DEG C, wherein nitrogen or an inert gas is used as a protective gas during the whole annealing process.

Description

technical field [0001] The invention relates to an annealing method, in particular to an annealing method for a power integrated circuit lead frame raw material. Background technique [0002] Power integrated circuit lead frames are mainly stamped from metal strips. In order to ensure the uniformity of lead frame size and performance reliability, the metal strips are required to have uniform physical and mechanical properties. The existing metal strip annealing method is to perform bell-type annealing after mechanical processing, that is, the metal strip needs to be coiled, then stacked and placed in layers, and the bell-type furnace shell is covered for annealing treatment. Under this method of annealing, the physical and mechanical properties of the metal strip are not uniform and stable enough, and there are performance differences between the outer ring and the inner ring of the same roll of metal strip and between different rolls of metal strip placed in different layer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C21D1/26C21D9/52
Inventor 郑康定曹光伟冯小龙段华平马叶军
Owner NINGBO KANGQIANG ELECTRONICS CO LTD