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Macromolecular dielectric material modifying agent and macromolecule dielectric material treatment method

A technology of dielectric materials and polymers, applied in the field of circuit production, can solve problems such as roughness, pressure, and heaviness that cannot be produced

Inactive Publication Date: 2014-03-05
SHENZHEN FARCIEN APPLIED MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In response to the light, thin and short requirements of electronic products, circuit boards, packaging substrates, and even volumetric circuits must be developed towards high density. Production must also be integrated in these advanced processes, that is, the circuit design of high-density interconnection technology. In the production process, there are mainly two problems: the production of thin lines and the reliability of interlayer interconnection
For dielectric materials with high polarity, this method can effectively increase the roughness of the material surface, but for low polarity even there is no polar group on the main chain of the polymer, and only exists on the branch chain or cross-linking bond For polar-based dielectric materials, multiple desmearing treatments cannot produce the required roughness, and if the dielectric material has deep and rough surface pits, it will also cause damage to the later flash etching and palladium removal processes. come under heavy pressure

Method used

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  • Macromolecular dielectric material modifying agent and macromolecule dielectric material treatment method
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  • Macromolecular dielectric material modifying agent and macromolecule dielectric material treatment method

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Embodiment 1

[0042] 1.1 The formula of polymer dielectric material modifier is: 25g / L of triethanolamine; 1g / L of hyperbranched Jimmy’s cationic surfactant with the structure of formula (I), where R 1 for CH 3 , R 2 for C 12 h 25 , R 3 for CH 3 , n=2; non-ionic surfactant TRITON X-1000.5g / L; the balance is water, as shown in Table 1.

[0043] 1.2 Remove the 5×5cm copper foil on the board surface of Shengyi Tg150 substrate with etching solution, then soak it in the polymer dielectric material modifier obtained in 1.1, soak it at 60°C for 5min, wash it with water, and put it in the activation tank medium (palladium chloride 54mg / L, stannous chloride 8g / L, sodium chloride 200g / L and chemically pure grade sulfuric acid 45g / L), take it out after 5min, wash it with water, soak it in the accelerator solution with a constant temperature of 45℃ ( Sodium bicarbonate 10g / L and sodium chlorite 4.5g / L), take out after 2.5min and wash with water, and then soak in chemical copper solution with cons...

Embodiment 2

[0049] 2.1 The formula of polymer dielectric material modifier is: triethanolamine 25g / L; hyperbranched Jimich cationic surfactant with formula (I) structure 0.75g / L, where R 1 for CH 3 , R 2 for C 12 h 25 , R 3 for CH 3 , n=2; non-ionic surfactant TRITON X-1000.5g / L; the balance is water, as shown in Table 1.

[0050] 2.2 Remove the 5×5cm copper foil of Shengyi Tg150 substrate surface with etching solution, then soak it in the polymer dielectric material modifier obtained in 2.1, soak it at 60°C for 5min, wash it with water, and put it in the activation tank medium (palladium chloride 54mg / L, stannous chloride 8g / L, sodium chloride 200g / L and chemically pure grade sulfuric acid 45g / L), take it out after 5min, wash it with water, soak it in the accelerator solution with a constant temperature of 45℃ ( Sodium bicarbonate 10g / L and sodium chlorite 4.5g / L), take out after 2.5min and wash with water, and then soak in chemical copper solution with constant temperature of 32℃ ...

Embodiment 3

[0054] 3.1 The formula of polymer dielectric material modifier is: triethanolamine 25g / L; hyperbranched Jimich cationic surfactant with formula (I) structure 1.5g / L, where R 1 for CH 3 , R 2 for C 12 h 25 , R 3 for CH 3 , n=2; non-ionic surfactant TRITON X-1000.5g / L; the balance is water, as shown in Table 1.

[0055] 3.2 Remove the copper foil on the board surface of Shengyi Tg150 base material of 5×5cm with etching solution, then soak it in the polymer dielectric material modifier obtained in 3.1, soak it at 60°C for 5min, wash it with water, and put it in the activation tank medium (palladium chloride 54mg / L, stannous chloride 8g / L, sodium chloride 200g / L and chemically pure grade sulfuric acid 45g / L), take it out after 5min, wash it with water, soak it in the accelerator solution with a constant temperature of 45℃ ( Sodium bicarbonate 10g / L and sodium chlorite 4.5g / L), take out after 2.5min and wash with water, and then soak in chemical copper solution with constant ...

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Abstract

The invention provides a macromolecular dielectric material modifying agent and a macromolecular dielectric material treatment method. The modifying agent contains organic amine, cation macromolecular surfactant and water. Compared with a cleaning hole conditioning agent in the prior art, the macromolecular dielectric material modifying agent contains the organic amine and the cation macromolecular surfactant so that the surface of macromolecular dielectric material can be treated, wherein the organic amine can be used for cleaning the surface of the dielectric material, meanwhile, inorganic bases can be prevented from attacking the cation macromolecular surfactant, and the cation macromolecular surfactant can be dissolved and dispersed easily; the Zeta potential formed by the cation macromolecular surfactant is high, by means of strong positive charge adsorption, functional groups containing nitrogen can be planted on the surface of the dielectric material, the adsorption capacity of palladium activator and the mutual bonding strength of chemical copper can be increased, and thus the adhesive force between the chemical copper and the macromolecular dielectric material is enhanced.

Description

technical field [0001] The invention belongs to the technical field of circuit production, and in particular relates to a polymer dielectric material modifier and a processing method for the polymer dielectric material. Background technique [0002] In response to the light, thin and short requirements of electronic products, circuit boards, packaging substrates, and even bulk circuits must be developed towards high density. In the circuit manufacturing process, in addition to reducing the aperture of the via hole, the introduction of micro-blind Production must also be integrated in these advanced processes, that is, circuit design of high-density interconnection technology. In the production process, there are mainly two problems: the production of thin lines and the reliability of interlayer interconnection. [0003] As far as the thin line manufacturing process is concerned, the current relatively mature method is to use the additive layer-building technology, among whic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B3/18C08J7/12
Inventor 邱文裕刘毅赵继云
Owner SHENZHEN FARCIEN APPLIED MATERIALS