Polysilicon production apparatus

Abstract

The invention discloses a polysilicon production apparatus, comprising a chassis and a bell cover. The chassis and the bell cover are both of a double-layer structure; a cylinder-shaped annular pedestal is arranged in the bell cover; a cavity located between the lower end of the annular pedestal and the chassis is an air inflow cavity, and a cavity located between the annular pedestal and the upper end of the bell cover is an air outflow cavity; the center of the annular pedestal is provided with a cylinder chamber penetrating the top and the bottom of the annular pedestal, and the periphery of the annular pedestal is uniformly provided with silicon rod growing chambers penetrating the top and the bottom of the annular pedestal; an electrode fixing base is arranged on the chassis and is provided with electrodes; silicon cores are fixed on the electrodes; the upper ends of every two adjacent silicon cores are connected with a conductive silicon core; the interior of the cylinder chamber is provided with a cooler and a filter from top to bottom; and the silicon cores in the silicon rod growing chamber are sleeved with cooling jackets. Thus, the polysilicon production apparatus provided by the invention can rapidly adjust a reaction temperature in a reducing furnace, stably control the reaction temperature in an optimal range and reduce side reactions, thereby improving silicon rod purity.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a polysilicon production device. Background technique [0002] At present, most of the production of polysilicon is produced by the improved Siemens method. The improved Siemens method is to synthesize hydrogen chloride with chlorine and hydrogen, hydrogen chloride and industrial silicon powder at a certain temperature to synthesize trichlorosilane, and then treat the trichlorosilane Separation, rectification and purification. The purified trichlorosilane undergoes vapor phase chemical deposition reaction in a hydrogen reduction furnace to produce polysilicon. The optimum temperature range for the reaction is 1080°C-1150°C. If the temperature in the reaction furnace is too high, a large amount of silicon will be produced. powder, suspended in the reaction furnace, and deposited on the surface of silicon rods, resulting in indeterminate silicon, resulting in a decrease in th...

AI Technical Summary

Problems solved by technology

Its disadvantage is that the reaction temperature in the bell jar in the polysilicon production device of this structure is only cooled by the cooling medium in the jacket. When the temperature is too high, the cooling medium needs a long time to cool the reaction in the bell jar. The temperature is lowered to the optimal temperature, that is, the adjustment process takes a long time. During this process, more amorphous silicon has been produced on the surface of the silicon rod, and the amorphous silicon will fall on the surface of the silicon rod and pollute the silicon rod.

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