High-voltage instant semiconductor bridge ignition module

A semi-conductor and instantaneous technology, applied in the direction of weapon accessories, fuzes, electric fuzes, etc., can solve the problems of high ignition voltage, reduce ignition voltage and ignition energy, etc., and achieve the effect of low ignition voltage, small size and low ignition energy

Inactive Publication Date: 2014-03-26
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0003] The present invention aims at the problem that the existing semiconductor bridge has high ignition voltage and cannot meet the technical requirements of low-voltage ignition (<10V), and provides a high-instant semiconductor bridge ignition component. By improving the size of the bridge, the best doping is determined. Concentration, optimize the structure of the bridge, so as to achieve the purpose of significantly reducing the ignition voltage and ignition energy

Method used

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Embodiment Construction

[0029] Below in conjunction with accompanying drawing, the present invention is described in further detail:

[0030] In order to overcome the shortcoming that the ignition voltage of the existing semiconductor bridge is difficult to drop below 10V when the 10μF capacitor is discharged, the present invention designs a high-instant semiconductor bridge ignition component, whose structure is as follows figure 1 As shown, the ignition voltage can be reduced to below 6.3V by using the present invention, and the ignition time can be reduced to below 10 μs when the discharge voltage is 10V.

[0031] Such as figure 1 As shown, the high-prompt semiconductor bridge ignition assembly of the present invention includes a transducer element, a charge and a shell 7; charge.

[0032] The low-energy burst micro-semiconductor bridge transducer includes a ceramic electrode plug 11 and a semiconductor bridge chip, and the semiconductor bridge chip includes a silicon substrate, a polysilicon su...

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Abstract

The invention provides a high-voltage instant semiconductor bridge ignition module, and belongs to the field of a semiconductor bridge ignition device. The high-voltage instant semiconductor bridge ignition module comprises a tube shell (7), and propellant and an energy replacing element which are arranged in the tube shell (7), wherein the tube shell (7) has a sleeve structure, one end of the tube shell (7) is an open end, and the other end of the tube shell (7) is a closed end; the closed end of the tube shell (7) is provided with an axial through hole; the energy replacing element comprises a ceramic electrode plug (11); a semiconductor bridge chip is arranged above the ceramic electrode plug (11); the semiconductor bridge chip sequentially comprises a silicon substrate, a polycrystalline silicon substrate (4), an electric bridge (1) and an aluminium electrode (6) from bottom to top; the lower end surface of the silicon substrate is bonded on the upper end surface of the ceramic electrode plug (11); the aluminium electrode (6) comprises two electrode areas (3) which are separated from each other and are symmetrically arranged; the two electrode areas (3) are connected with each other by the electric bridge (1).

Description

technical field [0001] The invention belongs to the field of semiconductor bridge ignition devices, in particular to a high-instant semiconductor bridge ignition assembly. Background technique [0002] The existing semiconductor bridge is 100 μm long, 380 μm wide, 2 μm thick, and has a doping concentration of 7×10 19 Phosphorus atoms / cm 3 At this time, the resistivity can reach 7.6×10 -4 Ω·cm, and a bridge resistance of about 1Ω can be obtained at the same time. Because the existing semiconductor bridge ignition device has a large volume and a high ignition voltage, generally 10V-30V, it is difficult to meet the requirements of low voltage and low energy ignition. Contents of the invention [0003] The present invention aims at the problem that the existing semiconductor bridge has high ignition voltage and cannot meet the technical requirements of low-voltage ignition (<10V), and provides a high-instant semiconductor bridge ignition component. By improving the size ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): F42C11/02
Inventor 任慧穆慧娜焦清介周庆李含建
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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