High-voltage instant semiconductor bridge ignition module

Abstract

The invention provides a high-voltage instant semiconductor bridge ignition module, and belongs to the field of a semiconductor bridge ignition device. The high-voltage instant semiconductor bridge ignition module comprises a tube shell (7), and propellant and an energy replacing element which are arranged in the tube shell (7), wherein the tube shell (7) has a sleeve structure, one end of the tube shell (7) is an open end, and the other end of the tube shell (7) is a closed end; the closed end of the tube shell (7) is provided with an axial through hole; the energy replacing element comprises a ceramic electrode plug (11); a semiconductor bridge chip is arranged above the ceramic electrode plug (11); the semiconductor bridge chip sequentially comprises a silicon substrate, a polycrystalline silicon substrate (4), an electric bridge (1) and an aluminium electrode (6) from bottom to top; the lower end surface of the silicon substrate is bonded on the upper end surface of the ceramic electrode plug (11); the aluminium electrode (6) comprises two electrode areas (3) which are separated from each other and are symmetrically arranged; the two electrode areas (3) are connected with each other by the electric bridge (1).

Description

technical field [0001] The invention belongs to the field of semiconductor bridge ignition devices, in particular to a high-instant semiconductor bridge ignition assembly. Background technique [0002] The existing semiconductor bridge is 100 μm long, 380 μm wide, 2 μm thick, and has a doping concentration of 7×10 19 Phosphorus atoms / cm 3 At this time, the resistivity can reach 7.6×10 -4 Ω·cm, and a bridge resistance of about 1Ω can be obtained at the same time. Because the existing semiconductor bridge ignition device has a large volume and a high ignition voltage, generally 10V-30V, it is difficult to meet the requirements of low voltage and low energy ignition. Contents of the invention [0003] The present invention aims at the problem that the existing semiconductor bridge has high ignition voltage and cannot meet the technical requirements of low-voltage ignition (<10V), and provides a high-instant semiconductor bridge ignition component. By improving the size ...

AI Technical Summary

Problems solved by technology

[0003] The present invention aims at the problem that the existing semiconductor bridge has high ignition voltage and cannot meet the technical requirements of low-voltage ignition (<10V), and provides a high-instant semiconductor bridge ignition component. By improving the size of the bridge, the best doping is determined. Concentration, optimize the structure of the bridge, so as to achieve the purpose of significantly reducing the ignition voltage and ignition energy

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