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Method for measuring conductor resistance in integrated circuit

A technology for measuring wires and integrated circuits, applied in the direction of measuring resistance/reactance/impedance, measuring electrical variables, measuring devices, etc., can solve problems such as affecting the test accuracy and cannot completely eliminate errors, and achieve the benefits of the production process and reduce the impact. , the effect of improving the measurement accuracy

Inactive Publication Date: 2014-03-26
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this structure, there are two probes at both ends of the resistance. Each contact point not only measures the current value at both ends of the resistance, but also measures the voltage at both ends of the resistance, so the total resistance value is R T =V / I=R W +R C +R, where R W is the resistance of the wire, R C is the contact resistance value, and R is the actual resistance to be measured. Obviously, the resistance value measured in this way is larger than the actual value, so by increasing the number of measured squares SQR, such as figure 2 As shown, taking the average value after multiple measurements can reduce the error caused by the measurement, but since each measurement still includes the resistance value R of the wire W and contact resistance R C , can not completely eliminate the error, which affects the accuracy of the test

Method used

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  • Method for measuring conductor resistance in integrated circuit
  • Method for measuring conductor resistance in integrated circuit
  • Method for measuring conductor resistance in integrated circuit

Examples

Experimental program
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Effect test

Embodiment 1

[0038] image 3 Is a schematic diagram of the test structure provided by the present invention, Figure 4 It is a partial schematic diagram of the resistance test structure provided by the present invention. As shown in the figure, in this embodiment, it includes two solder pad groups A1 and A2. The solder pad group A1 includes two solder pads P1 and P2. A2 includes two solder pads P3 and P4, and the test lead S is electrically connected to each solder pad.

[0039] Choose one of the pads P1 and P3 in the two pad groups A1 and A2, apply a voltage between the pads P1 and P3, and use a voltmeter to measure the voltage V between the pads P1 and P3;

[0040] Then measure the other two pads P2, P4 of the two pad groups that are not applied with voltage, and use the probe contact to measure the current I;

[0041] Use formula The resistance Rs of the test lead between the two pad groups is obtained.

Embodiment 2

[0043] image 3 Is a schematic diagram of the test structure provided by the present invention, Figure 4 It is a partial schematic diagram of the resistance test structure provided by the present invention. It includes two pad groups A1 and A2. The pad group A1 includes two pads P1 and P2. The pad group A2 includes two pads P3 and P4. The wires are electrically connected to each bonding pad.

[0044] Choose one of the pads P2 and P4 in the two pad groups A1 and A2, apply a voltage between the pads P2 and P4, and measure the voltage V between the pads P2 and P4 with a voltmeter;

[0045] Then measure the two solder pads P1 and P3 to which no voltage is applied in the two solder pad groups, and use the probe contact to measure the current I;

[0046] Use formula The resistance Rs of the test lead between the two pad groups is obtained.

Embodiment 3

[0048] image 3 Is a schematic diagram of the test structure provided by the present invention, Figure 4 It is a partial schematic diagram of the resistance test structure provided by the present invention. It includes two pad groups A1 and A2. The pad group A1 includes two pads P1 and P2. The pad group A2 includes two pads P3 and P4. The wires are electrically connected to each bonding pad.

[0049] Choose one of the pads P1 and P4 in the two pad groups A1 and A2, apply a voltage between the pads P1 and P4, and measure the voltage V between the pads P1 and P4 with a voltmeter;

[0050] Then measure the two pads P2 and P3 of the two pad groups that are not voltage-applied, and use the probe to contact to measure the current I;

[0051] Use formula The resistance Rs of the test lead between the two pad groups is obtained.

[0052] The present invention introduces the Kelvin test structure into the WAT test structure, and then tests the wire resistance, by measuring the voltage betwee...

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Abstract

The invention relates to the technical field of semiconductor testing, in particular to a method for measuring conductor resistance in an integrated circuit. According to the method, voltages between two contact points can be measured by a voltmeter, and currents of another two contact points are contacted and measured by probes; although the voltages acquired by the structural measurement include a contact resistance voltage and a conductor voltage, currents passing through the voltmeter are quite small due to high resistance values of the voltmeter, so that contact resistance and the conductor resistance are negligible, in other words, measured voltage values are basically equal to voltage values at two ends of a resistor, then measuring errors are reduced and measuring accuracy is improved, and further improvement of the production process is facilitated.

Description

Technical field [0001] The invention relates to the technical field of semiconductor testing, in particular to a method for measuring wire resistance in an integrated circuit. Background technique [0002] With the continuous advancement of technology, the requirements of integrated circuit manufacturing process are increasing. In the manufacturing process of integrated circuits, WAT (Wafer Acceptance Test) structures need to be manufactured around each integrated circuit chip of the wafer. After completion, test the WAT structure. If, after testing the WAT structure, if other failures such as short circuit or leakage are found in the WAT structure, perform failure analysis through the WAT structure to analyze the cause of the failure, and then perform the manufacturing process Improve, thereby improving the production process. [0003] The important parameters and performance of many devices in the semiconductor process are related to the sheet resistance. In order to improve the...

Claims

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Application Information

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IPC IPC(8): G01R27/08
Inventor 韩增智刘景富王艳生
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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