An organic light emitting lighting device
A lighting device and organic technology, applied in organic light-emitting devices, organic light-emitting device parameters, electric solid-state devices, etc., can solve problems such as complex preparation process, and achieve the effect of simple preparation process and high light transmittance
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Embodiment 1
[0032] This embodiment provides an organic light-emitting lighting device, such as figure 1 As shown, it includes a first electrode layer and a second electrode layer, and the first electrode layer is sequentially stacked with a hole injection layer, a hole transport layer, a first light emitting layer, a second light emitting layer, an electron transport layer, an electron For the injection layer and the second electrode layer, along the direction away from the first electrode, the forbidden band width of each light-emitting layer decreases successively, the forbidden band width of the first light-emitting layer is 2.65eV, and the forbidden band width of the second light-emitting layer The width is 2.18eV.
[0033] The specific structure of the organic light-emitting lighting device is:
[0034] ITO(180nm) / HAT-CN(5nm) / NPB(30nm) / Bepp2(10nm):BD(4%) / TCTA(12nm):Bepp2(100%):TBRb(3%) / DPyPA(15nm) / LiF (0.5nm) / Al (150nm).
[0035] Among them, the ITO (indium tin oxide) layer is th...
Embodiment 2
[0051] This embodiment provides an organic light-emitting lighting device, which includes a first electrode layer and a second electrode layer, and a hole injection layer, a hole transport layer, a first light-emitting layer, a bipolar electrode layer, and a hole injection layer are sequentially stacked on the first electrode layer The barrier layer, the second light-emitting layer, the electron transport layer, the electron injection layer and the second electrode layer, along the direction away from the first electrode, the forbidden band width of each light-emitting layer decreases successively, and the forbidden band width of the first light-emitting layer The width is 2.65eV, and the forbidden band width of the second light-emitting layer is 2.21eV.
[0052] The specific structure of the organic light-emitting lighting device is:
[0053] ITO(180nm) / HAT-CN(5nm) / NPB(30nm) / Bepp2(10nm):BD(4%) / TCTA(4nm):Bepp2(100%) / TCTA(12nm):PO-01(10% ) / DPyPA (15nm) / LiF (0.5nm) / Al (150nm). ...
Embodiment 3
[0057] This embodiment provides an organic light-emitting lighting device, which includes a first electrode layer and a second electrode layer, and a hole injection layer, a hole transport layer, a first light-emitting layer, a bipolar electrode layer, and a hole injection layer are sequentially stacked on the first electrode layer The barrier layer, the second light-emitting layer, the electron transport layer, the electron injection layer and the second electrode layer, along the direction away from the first electrode, the forbidden band width of each light-emitting layer decreases successively, and the forbidden band width of the first light-emitting layer The width is 2.65eV, and the forbidden band width of the second light-emitting layer is 2.15eV.
[0058] The specific structure of the organic light-emitting lighting device is:
[0059] ITO(180nm) / HAT-CN(5nm) / NPB(30nm) / Bepp2(10nm):BD(4%) / TCTA(4nm):Bepp2(100%) / TCTA(12nm):Ir(ppy) 3 (15%): Ir(piq) 3 (1%) / DPyPA (15nm) / LiF...
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