Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-power ultraviolet laser beam characteristic measurement and recording method based on photocarrier radiation technology

A technology of photocarrier radiation and ultraviolet laser is applied in the field of high-power ultraviolet laser beam characteristic measurement and recording, which can solve the problem of increasing the measurement error of laser beam distribution characteristics and the like.

Inactive Publication Date: 2015-05-20
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the nonlinear response and wavefront error of the optical device, the measurement error of the laser beam distribution characteristic is increased

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-power ultraviolet laser beam characteristic measurement and recording method based on photocarrier radiation technology
  • High-power ultraviolet laser beam characteristic measurement and recording method based on photocarrier radiation technology
  • High-power ultraviolet laser beam characteristic measurement and recording method based on photocarrier radiation technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The present invention is described in further detail in conjunction with the accompanying drawings, the doped semiconductor material is As + Implantation of single crystal silicon substrate material, implantation energy 1keV, implantation dose 1×10 15 cm -2 , the 193nm ArF excimer laser beam is irradiated on the surface of the doped semiconductor sample, and its light energy is absorbed by the semiconductor material through electromagnetic interaction. Since the absorbed laser energy is lower than the melting threshold of the semiconductor material, the semiconductor material is recrystallized through solid-phase epitaxy, Thus, the lattice damage caused by ion implantation is repaired to a certain extent, and the damage caused by doping is repaired due to the annealing effect. The two-dimensional distribution of the repair degree is related to the light intensity distribution of the laser beam. At this time, the two-dimensional excimer laser beam The light intensity di...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a high-power ultraviolet laser beam characteristic measurement and recording method based on the photocarrier radiation technology. The method is characterized in that an ultrasonic laser beam irradiates the surface of a doped semiconductor material to generate a laser annealing effect, damage, caused by doping, to the semiconductor material is repaired, and the two-dimensional distribution of the repair degree of the semiconductor material is related to the luminous intensity distribution of the laser beam. The two-dimensional distribution of the damage repair condition of the doped semiconductor material is measured through the photocarrier radiation technology, and the two-dimensional luminous intensity distribution of the ultrasonic laser beam can be obtained through calibration. The method has the advantages that the characteristics of the high-power ultrasonic laser beam can be directly and permanently recorded, and the characteristics of the high-power ultrasonic laser beam can be obtained through simple calibration and data processing.

Description

technical field [0001] The invention relates to the technical field of measurement and recording of characteristics of ultraviolet laser beams, in particular to a method for measuring and recording characteristics of high-power ultraviolet laser beams based on photocarrier radiation technology. Background technique [0002] With the development of high-power ultraviolet lasers, their applications in medical, industrial and military fields are becoming more and more extensive. At present, there are two main methods for measuring the characteristics of ultraviolet laser beams: direct measurement and indirect measurement. The direct measurement adopts the ultraviolet imaging device that responds to the ultraviolet laser for imaging; the indirect measurement needs to convert the ultraviolet light signal output by the laser into a conventional band optical signal, and then use the conventional band optical imaging device to image it. For the measurement of high-power ultraviolet...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01J1/42G01J1/00
Inventor 李斌成王谦
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com