Three-level rectification half bridge
A load current, power semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, AC power input conversion to DC power output, etc., can solve high switching overvoltage, high parasitic inductance, hinder the switching speed of power semiconductor switching and switching frequency
Active Publication Date: 2014-04-09
SEMIKRON ELECTRONICS GMBH & CO KG
View PDF6 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
The wires connecting the substrate have the disadvantage that these wires have a relatively high parasitic inductance, which leads to high switching overvoltages during commutation, which impede the achievable switching speeds and switching frequencies of the power semiconductor switches
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0034] FIG. 1 shows a circuit diagram of a conventional three-stage rectifier half-bridge. The three-stage rectifier half-bridge has a first power semiconductor switch T1, a second power semiconductor switch T2, a third power semiconductor switch T3, a fourth power semiconductor switch T4, a first diode D1, a second diode D2, a Three diodes D3, a fourth diode D4, a fifth diode D5 and a sixth diode D6, the power semiconductor switch and the diodes are electrically connected as shown in FIG. 1 into a so-called half-bridge circuit. The three-stage rectifier half-bridge is supplied by two power supplies (not shown in FIG. 1 ), which each generate half of the intermediate circuit voltage Ud / 2, so that the intermediate circuit is applied between the two DC voltage connections DC+ and DC- Voltage Ud.
[0035] In FIG. 1 , the power semiconductor switch is designed as an IGBT and the control input G can be switched on and off via the power semiconductor switch. By correspondingly sw...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
This invention relates to a three-level rectification half bridge, which possesses a first basal plate (2) and a second basal plate (3) which is separated from the second basal plate (2). The first basal plate possesses a first insulation material body (6a) and a first circuit layer (7) which is conductive, structuralized and arranged on the first circuit layer (7). The first power semiconductor switch (T1), a second power semiconductor switch (T2), a first diode (D1) and a first diode assembly (10) are arranged on the first circuit layer and are connected to the first circuit layer. The second basal plate possesses a second insulation material body (6b) and a second circuit layer which is conductive, structuralized and arranged on the second insulation material. The third power semiconductor switch (T3), a fouth power semiconductor switch (T4), a second diode (D2) and a second diode assembly (11) are arranged on the structuralized second circuit layer and is connected to the structuralized second circuit layer. This invention realizes a three-level rectification half bridge (1,1')with reduced switch overvoltage.
Description
technical field [0001] The invention relates to a three-stage rectifying half bridge. Background technique [0002] The excellence of the three-level rectifier over the prevailing conventional rectifier is that, if it is operated as an inverter, it not only produces a voltage at the load connection AC on its alternating voltage side, like a conventional rectifier, which essentially corresponds to the intermediate circuit A positive or negative alternating voltage of the voltage Ud and additionally an alternating voltage having a voltage value substantially corresponding to half the positive or negative voltage of the intermediate circuit voltage Ud can be generated at the load connection AC on the alternating voltage side. [0003] This makes it possible, for example, to better approximate the voltage generated by the rectifier at the load connection AC on the AC voltage side to a sinusoidal AC voltage. [0004] In this case, the three-stage rectifier has a plurality of thr...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H02M7/00
CPCH01L2224/49175H01L23/49838H01L23/3735H02M7/487H01L23/49833H02M7/003H01L2224/48227H01L2224/48137H01L25/072H01L2924/30107H01L2924/13091H01L2924/1301H01L2924/13055H01L2924/1305H01L2924/00H02M7/483
Inventor 英戈·施陶特阿伦特·温特里希
Owner SEMIKRON ELECTRONICS GMBH & CO KG