Pulling method crystal growth furnace

Abstract

The invention discloses a pulling method crystal growth furnace. The pulling method crystal growth furnace is characterized by comprising a furnace body and a crucible (2), wherein the interior of the furnace body is hollow so as to form a furnace cavity (5), the crucible (2) is arranged at the center of the furnace cavity (5), and the crucible (2) is connected with a seed crystal rod (4) which is coaxially arranged in the furnace cavity (5) and used for growing crystals (3) in the crucible (2); and the pulling method crystal growth furnace is characterized in that the inner wall of the furnace cavity (2) at the upper part of the crucible (2) has a certain conicity and a round table cylinder structure is further formed. The growth furnace disclosed by the invention can effectively control the three-dimensional effect of flow and heat transfer in the pulling method furnace cavity, organize a relatively good temperature environment around the crystals and simultaneously form a relatively good temperature gradient at a solid-liquid interface in the growth process of the crystals. The novel furnace cavity structure can reduce the production of dislocation or rupture in the growth process of the crystals and improve the quality of the crystals.

Description

technical field [0001] The invention belongs to the technical field of semiconductor crystal growth equipment, and in particular relates to a pulling method crystal growth furnace. Background technique [0002] At present, due to the wide application of semiconductor crystals, especially the use of high-melting-point semiconductors, the pulling method plays an important role in crystal production as an effective method for growing high-melting-point semiconductor crystals. [0003] like figure 1 As shown in the prior art, a crystal growth furnace by the pulling method includes a furnace body, a crucible 2 located in the center of the furnace cavity 5, and a growing crystal 3 in the crucible 2, which is coaxial with the furnace cavity 5 The seed rod 4 is provided, one end of which is in contact with the crystal 3 for the growth of the crystal 3, and the other end protrudes from the top of the furnace body. The bottom of the crucible 2 in the furnace cavity 5 is provided with...

AI Technical Summary

Problems solved by technology

At the same time, the actual flow state of the gas in the furnace cavity is turbulent, and two factors cause a more significant three-dimensional asymmetry of the temperature distribution

Cylindrical crystals cooled in this environment must not obtain a three-dimensional symmetrical temperature distribution, so large stresses are likely to occur in the crystals, resulting in a large number of dislocations or crystal cracks, reducing the quality of the crystals

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