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Detection method of wave aberration and imaging best focal plane of lithographic projection objective lens

A technology of optimal focal plane and lithography projection, which is applied in the field of lithography machines, can solve the problems of wave aberration of projection objective lens and the inability to realize optimal focal plane detection at the same time, so as to improve speed and accuracy, avoid crosstalk, and improve detection The effect of precision

Active Publication Date: 2015-07-29
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

However, the prior technologies can only detect the wave aberration of the projection objective lens, and cannot realize the detection of the best focal plane at the same time

Method used

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  • Detection method of wave aberration and imaging best focal plane of lithographic projection objective lens
  • Detection method of wave aberration and imaging best focal plane of lithographic projection objective lens
  • Detection method of wave aberration and imaging best focal plane of lithographic projection objective lens

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Embodiment Construction

[0047] The present invention will be further described below in conjunction with the examples and drawings, but the examples should not limit the protection scope of the present invention.

[0048] see first figure 1 , figure 1 It is a schematic diagram of the system structure of the wave aberration of the lithographic projection objective lens and the method for detecting the best focal plane of imaging adopted in the present invention. The system includes: an illumination source 1 that generates an illumination beam; an illumination system 2 that can adjust the beam waist size, light intensity distribution, partial coherence factor and illumination mode of the beam emitted by the illumination source 1; it can carry a test mask 3 and has a precise step mask stage 4 with positioning capability; projection objective lens 6 capable of zooming and imaging the detection mark 5 on the test mask 3 according to a certain ratio; workpiece stage 7 capable of precise stepping and posit...

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Abstract

The invention relates to a detection method of wave aberration and an optical imaging focal plane of a photoetching projection objective. The method comprises the following steps: extracting a principal component of an aerial image including aberration influence and a linear regression matrix by carrying out principal component analysis and multiple linear regression on a specially designed two-dimensional detection mark in a simulated aerial image in the position of the optimal focal plane; fitting an actually measured aerial image by means of the principal component; quickly detecting the optical imaging optimal focal plane with low cost by taking minimum root-mean-square of fitting residual error as a judgment ground; and fitting coefficients of the principal component by the regression matrix to realize quick and high-precision in-situ detection of the wave aberration. According to the method provided by the invention, the optimal focal plane can be detected just by collecting the aerial images of the detection mark in different focal depth positions, and high-precision detection of the wave aberration of the aerial image is realized by means of the optimal focal plane.

Description

technical field [0001] The invention relates to a lithography machine, in particular to a method for detecting wave aberration of a lithography projection objective lens and an imaging best focal plane. Background technique [0002] The lithography machine promotes the continuous development of chips to a higher level of integration in accordance with Moore's Law. As the resolution of lithography is getting closer to the diffraction limit, the wave aberration of projection objective lens has more and more significant impact on imaging, resulting in problems such as deterioration of lithography imaging quality and reduction of process window. Factors such as temperature, humidity, vibration, and stress in the environment of the lithography machine can all cause changes in wave aberration. With the continuous increase of the numerical aperture of the projection objective lens, the focal depth of lithographic imaging is also getting smaller and smaller. When the depth of focu...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G01M11/02
Inventor 李思坤王向朝杨济硕闫冠勇李兆泽
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI