Thermal resistance measuring method for semiconductor device

Abstract

The invention relates to a thermal resistance measuring method for a semiconductor device. The thermal resistance measuring method includes the following steps that (1) according to the structure of the semiconductor device, a main heat conduction channel is determined, and a constant temperature plane good in contact is arranged on the surface of a shell of the main heat conduction channel; (2) certain power is loaded to the semiconductor device, after the semiconductor device reaches heat balance, it is switched to the situation that measuring power is loaded to the semiconductor device, temperature-sensitive parameters of the semiconductor device are measured in real time to obtain the junction temperature for measuring the semiconductor device, and accordingly a transient thermal response curve of the semiconductor device is obtained; (3) according to the transient thermal response curve, the thermal resistance from a junction of the semiconductor device to the shell is determined. According to the thermal resistance measuring method for the semiconductor device, heating power is loaded through a P zone and an N zone of a substrate of the semiconductor device, the junction temperature is measured by the utilization of a PN junction assembly existing in the semiconductor device, and therefore the transient thermal resistance of integrated circuit products without temperature-sensitive diodes and the transient thermal resistance of non-power integrated circuit products can be measured accurately.

Description

technical field [0001] The invention relates to a thermal resistance test method of a semiconductor device, which is particularly suitable for the transient thermal resistance test of integrated circuit products. Background technique [0002] Temperature is an important factor affecting the characteristics of semiconductor devices. When the device is working, too high junction temperature will have many adverse effects on the device, such as reduced performance, reduced reliability, and shortened lifespan. With the development of devices to small size and high integration, the power density carried in a limited space is getting higher and higher. This puts forward more and more urgent requirements for the research on the working temperature of semiconductor devices. First of all, it is necessary to accurately grasp the thermal resistance value of each electronic component in the system in order to conduct accurate thermal analysis and thermal management for the system. ...

AI Technical Summary

Problems solved by technology

[0007] In order to solve the problem that integrated circuit products cannot directly use the transient thermal response test technology based on the electrical method to test thermal parameters, the application provides a thermal resistance test method for semiconductor devices, which is characterized in that it includes the following steps: 1) According to the semiconductor The structure of the device, determine the main heat conduction channel, and set a constant temperature plane with good contact on the shell surface of the main heat conduction channel; 2) Load a certain power to the semiconductor device, and switch to loading the semiconductor device with measurement power after the semiconductor device reaches thermal equilibrium , measure the junction temperature of the semiconductor device by measuring the temperature-sensitive parameters of the semiconductor device in real time, and then obtain the transient thermal response curve of the semiconductor device; 3) determine the thermal resistance of the semiconductor device junction to case according to the transient thermal response curve

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